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DS1220Y

16K Nonvolatile SRAM

DS1220Y

091295 1/8

FEATURES

• 10 years minimum data retention in the absence of

external power

• Data is automatically protected during power loss

• Directly replaces 2K x 8 volatile static RAM or

EEPROM

• Unlimited write cycles

• Low-power CMOS

• JEDEC standard 24–pin DIP package

• Read and write access times as fast as 100 ns

• Full + 10% operating range

• Optional industrial temperature range of -40°C to

+85°C, designated IND

PIN ASSIGNMENT

12 13

A10

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

GND

24–PIN ENCAPSULATED PACKAGE

720 MIL EXTENDED

PIN DESCRIPTION

-A

– Address Inputs

-DQ

– Data In/Data Out

– Chip Enable

– Write Enable

– Output Enable

– Power (+5V)

GND – Ground

DESCRIPTION

The DS1220Y 16K Nonvolatile SRAM is a 16,384-bit,

fully static, nonvolatile RAM organized as 2048 words

by 8 bits. Each NV SRAM has a self-contained lithium

energy source and control circuitry which constantly

monitors V

for an out-of-tolerance condition. When

such a condition occurs, the lithium energy source is

automatically switched on and write protection is uncon-

ditionally enabled to prevent data corruption. The NV

SRAM can be used in place of existing 2K x 8 SRAMs

directly conforming to the popular bytewide 24-pin DIP

standard. The DS1220Y also matches the pinout of the

2716 EPROM or the 2816 EEPROM, allowing direct

substitution while enhancing performance. There is no

limit on the number of write cycles that can be executed

and no additional support circuitry is required for micro-

processor interfacing.

Summary of content (8 pages)

PAGE 1
DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power replaces 2K x 8 volatile static RAM or EEPROM • Unlimited write cycles • Low-power CMOS • JEDEC standard 24–pin DIP package • Read and write access times as fast as 100 ns • Full + 10% operating range • Optional industrial temperatu
PAGE 2
DS1220Y READ MODE The DS1220Y executes a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable) and OE (Output Enable) are active (low). The unique address specified by the 11 address inputs (A0-A10) defines which of the 2048 bytes of data is to be accessed. Valid data will be available to the eight data output drivers within tACC (Access Time) after the last address input signal is stable, providing that CE and OE access times are also satisfied.
PAGE 3
DS1220Y ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground Operating Temperature Storage Temperature Soldering Temperature -0.3V to +7.0V 0°C to 70°C; -40°C to +85°C for IND parts -40°C to +70°C; -40°C to +85°C for IND parts 260°C for 10 seconds * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied.
PAGE 4
DS1220Y (0°C to 70°C; VCC=5.
PAGE 5
DS1220Y tRC READ CYCLE ADDRESSES VIH VIL VIH VIL tACC tCO VIH CE VIH VIL tOH VIH VIL tOD VIH OE tOE VIH VIL tCOE tOD tCOE DOUT VOH OUTPUT VOH VOL DATA VALID VOL SEE NOTE 1 tWC WRITE CYCLE 1 VIH VIL ADDRESSES VIH VIL VIH VIL tAW CE VIL VIL tWR1 tWP WE VIH VIL tODW VIH VIL HIGH INPEDANCE tOEW DOUT tDS tDH1 VIH VIH DATA IN STABLE DIN VIL SEE NOTES 2, 3, 4, 6, 7 AND 8 WRITE CYCLE 2 VIL tWC ADDRESSES CE VIH VIL tAW VIH VIL VIH VIL tWR2 tWP VIH VIL VIL VIH VIL V
PAGE 6
DS1220Y POWER-DOWN/POWER-UP CONDITION VCC VTP 3.
PAGE 7
DS1220Y 7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in a high impedance state during this period. 8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high impedance state during this period. 9. Each DS1220Y is marked with a 4-digit date code AABB. AA designates the year of manufacture. BB designates the week of manufacture.
PAGE 8
DS1220Y DS1220Y NONVOLATILE SRAM, 24-PIN 720 MIL EXTENDED MODULE 15 24 PKG 1 14 A C D K 11 EQUAL SPACES AT .100 ± .010 TNA J H B 091295 8/8 DIM MIN MAX A IN. MM 1.320 33.53 1.340 34.04 B IN. MM 0.695 17.65 0.720 18.29 C IN. MM 0.390 9.91 0.415 10.54 D IN. MM 0.100 2.54 0.130 3.30 E IN. MM 0.017 0.43 0.030 0.76 F IN. MM 0.120 3.05 0.160 4.06 G IN. MM 0.090 2.29 0.110 2.79 H IN. MM 0.590 14.99 0.630 16.00 J IN. MM 0.008 0.20 0.012 0.30 K IN. MM 0.015 0.38 0.021 0.