User Manual

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FEATURES

§ Integrated charge controller supporting both

rechargeable lithium and NiMH battery

technologies

§ Available in two configurations:

– Internal 25mW current-sense resistor

– External user-selectable sense resistor

§ Current measurement:

– 15-bit bidirectional measurement

– Internal sense resistor configuration:

62.5mA LSB and ±2A dynamic range

– External sense resistor configuration:

1.56mV LSB and ±51.2mV dynamic range

§ Current accumulation

– Internal sense resistor: 0.25mAh LSB

– External sense resistor: 6.25mVh LSB

§ Voltage measurement with 4.88mV resolution

§ Temperature measurement using integrated

sensor with 0.125°C resolution

§ 40 bytes of lockable EEPROM

§ 16 bytes of general-purpose SRAM

§ 42-day timer

§ Dallas 1-Wire

interface with 64-bit ID

§ 1.8V logic levels

§ Low power consumption:

– Active current: 80mA typical

– Sleep current: 0.5mA typical

PIN ASSIGNMENT

PIN DESCRIPTION

UV – Battery Undervoltage Detect Output

CC – Charge Control Output

VCH – Charge Supply Input

SNS – Sense Resistor Connection

IS2 – Current-Sense Input

IS1 – Current-Sense Input

VSS – Device Ground

DQ – Data Input/Output

VIN – Voltage Sense Input

VDD – Power Supply Input

NC – No Connect

ORDERING INFORMATION

ORDERING NUMBER MARKING DESCRIPTION

DS2770AE D2770EA TSSOP, Ext. Sense Res., 4.1V Charge Voltage

DS2770BE D2770EB TSSOP, Ext. Sense Res., 4.2V Charge Voltage

DS2770AE/T&R D2770EA DS2770AE on Tape & Reel

DS2770BE/T&R D2770EB DS2770BE on Tape & Reel

DS2770AE-025 2770EAR TSSOP, 25mW Sense Res., 4.1V Charge Voltage

DS2770BE-025 2770EBR TSSOP, 25mW Sense Res., 4.2V Charge Voltage

DS2770AE-025/T&R 2770EAR DS2770AE-025 on Tape & Reel

DS2770BE-025/T&R 2770EBR DS2770BE-025 on Tape & Reel

DS2770

Battery Monitor and Charge Controlle

www.maxim-ic.com

DS2770

16-Pin TSSOP

UV VDD

VIN

VSS

IS1

IS2

SNS

VCH

1-Wire is a registered trademark of Dallas Semiconductor.

Summary of content (27 pages)

PAGE 1
DS2770 Battery Monitor and Charge Controller www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT Integrated charge controller supporting both rechargeable lithium and NiMH battery technologies Available in two configurations: – Internal 25mW current-sense resistor – External user-selectable sense resistor Current measurement: – 15-bit bidirectional measurement – Internal sense resistor configuration: 62.5mA LSB and ±2A dynamic range – External sense resistor configuration: 1.
PAGE 2
DS2770 DESCRIPTION The DS2770 battery monitor and charge controller performs several functions needed for thorough battery maintenance. When used in conjunction with the host system’s processor, a battery-pack resident DS2770 may be utilized for applications that include charging, remaining capacity estimation, safety monitoring, and nonvolatile (NV) parametric storage.
PAGE 3
DS2770 BLOCK DIAGRAM Figure 1 1-WIRE INTERFACE AND ADDRESS DQ THERMAL SENSE REGISTERS AND USER MEMORY LOCKABLE EEPROM VOLTAGE REFERENCE MUX SRAM TEMPERATURE ADC VOLTAGE VIN IS1 CURRENT ADC ACCUM CURRENT IS2 TIMER TIMEBASE STATUS/CONTROL CHARGE CONTROL VCH Internal sense resistor configuration only 25mW SNS 3 of 27 CHIP GROUND CC UV VSS
PAGE 4
DS2770 DETAILED PIN DESCRIPTION Table 1 PIN SYMBOL DESCRIPTION 1 UV Battery Undervoltage Detect Output: This pin allows charge of the battery at a reduced rate when the battery cell voltage is less than the low battery voltage threshold, VLB. 2 CC Charge Control Output: Charge of the battery is controlled through this pin when battery cell voltage is greater than or equal to VLB.
PAGE 5
DS2770 APPLICATION EXAMPLE Figure 2 PACK+ CHARGE SOURCE 4403 FMMT718 150W 100W 0.1mF 360W 1kW 4.7kW UV CC VCH SNS VDD VIN DQ VSS SNS SNS NC IS2 VSS VSS NC IS1 1kW 0.1mF 5.1V Lithium Protection Circuit 0.1mF PACKDATA R SNS(1) 150W DS2770 R SNS-INT (2) Voltage Sense VSS 10KW IS2 10KW SNS 1 — RSNS is present for external sense resistor configuration only. 2 — RSNS-INT is present for internal sense resistor configuration only.
PAGE 6
DS2770 POWER MODES The DS2770 has two possible power modes: Active Mode and Sleep Mode. While in Active Mode, the DS2770 continually measures current, voltage, temperature, and time. Also, current flow is accumulated, charge control is provided, and data is available to the host system. In Sleep Mode, the DS2770 ceases these activities.
PAGE 7
DS2770 After initiation and clearing of the above conditions, fast charging begins with the CC pin driven low. During fast charging, CC remains low, except for periodic testing of premature charge source removal in which CC is driven high for approximately 27ms every 55ms. As long as the charge source remains connected and the temperature remains in the valid range, charging will proceed per the method selected by the CTYPE bit.
PAGE 8
DS2770 RECHARGEABLE LITHIUM PULSE CHARGING Figure 3 VCV VIN VLB UV t VCV CC Trickle Charge Bulk Region Pulse Region Pulse Charge t CD Charge Complete NiMH CHARGER OPERATION During NiMH charging, charge current from a constant current or current-limited supply is gated to the battery under control of UV and CC pins. Since the transition from trickle charge to fast charge occurs when the battery reaches 3.0V, a three-cell NiMH battery will begin fast charge at 1.0V per cell.
PAGE 9
DS2770 SECONDARY CHARGE TERMINATION Two secondary charge terminations are included. Independent of battery technology selection, charge terminates if the maximum charge temperature is exceeded or the charge timer expires. The CSTAT1 and CSTAT0 bits in the Status Register will both be set to 1 to indicate a “charge sequence completed” status. The maximum temperature threshold, TMCT, is fixed at +50°C. If the temperature measurement exceeds TMCT during charge, the charge is terminated.
PAGE 10
DS2770 CURRENT REGISTER FORMAT Figure 5 MSB—Address 0E S 214 213 212 211 210 29 MSb LSB—Address 0F 28 27 LSb MSb 26 25 24 23 22 21 20 LSb Units: 62.5mAh for internal sense resistor 1.56mVh for external sense resistor CURRENT ACCUMULATORS The current accumulator facilitates remaining capacity estimation by tracking the net current flow into and out of the battery. Current flow into the battery increments the current accumulator while current flow out of the battery decrements it.
PAGE 11
DS2770 CURRENT-OFFSET BIAS Figure 7 MSB—Address 32 S LSB—Address 33 214 213 212 211 210 29 MSb 28 27 LSb MSb 26 25 24 23 22 21 20 LSb Units: 0.0625mA for internal sense resistor 1.5625mV for external sense resistor VOLTAGE MEASUREMENT The DS2770 continuously measures the voltage between pins VIN and VSS with a resolution of 4.88mV over a range of 0V to 4.992V. Measurement data is updated every 55ms and placed in the Voltage Register in two’s complement format.
PAGE 12
DS2770 ELAPSED TIME REGISTER FORMAT Figure 10 MSB—Address 02 215 214 213 212 211 210 29 MSb LSB—Address 03 28 27 LSb MSb 26 25 24 23 22 21 20 LSb Units: 0.015625hr MEMORY The DS2770 has a 256-byte linear address space with registers for instrumentation, status, and control in the lower 32 bytes, with lockable EEPROM and SRAM memory occupying portions of the remaining address space.
PAGE 13
DS2770 MEMORY MAP Figure 11 ADDRESS (HEX) 00 01 02 03 04 to 05 06 07 08 to 0B 0C 0D 0E 0F 10 11 12 to 17 18 19 1A to 1F 20 to 2F 30 to 3F DESCRIPTION R/W Reserved Status Register R** Elapsed Time Register MSB R/W Elapsed Time Register LSB R/W Reserved Charge Time Register R/W EEPROM Register R/W Reserved Voltage Register MSB R Voltage Register LSB R Current Register MSB R Current Register LSB R Accumulated Current Register MSB R/W Accumulated Current Register LSB R/W Reserved Temperature Register MSB R Te
PAGE 14
DS2770 STATUS REGISTER FORMAT Figure 12 Address 01 bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 X X CINI CTYPE CSTAT1 CSTAT0 PMOD RNAOP CSTAT1, CSTAT0 — Charge Status. The CSTAT1 and CSTAT0 bits indicate the status of charge per the table below: CSTAT1 0 0 1 1 CSTAT0 0 1 0 1 STATUS No charge source present Charge in progress Charge source is present Charge sequence completed The charge sequence complete state (1, 1) is present until cleared by a write to the Status Register.
PAGE 15
DS2770 EEPROM REGISTER Figure 13 shows the format of the EEPROM Register. The function of each bit is described in detail in the following paragraphs. EEPROM REGISTER FORMAT Figure 13 Address 07 bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 EEC LOCK X X X BL2 BL1 BL0 EEC — EEPROM Copy Flag. A 1 in this read-only bit indicates that a Copy Data command is in progress. While this bit is high, writes to EEPROM addresses are ignored.
PAGE 16
DS2770 NET ADDRESS FORMAT Figure 14 8-Bit CRC 48-Bit Serial Number 8-Bit Family Code (2Eh) CRC GENERATION The DS2770 has an 8-bit CRC stored in the most significant byte of its 64-bit net address. To ensure error-free transmission of the address, the host system can compute a CRC value from the first 56 bits of the address and compare it to the CRC from the DS2770. The host system is responsible for verifying the CRC value and taking action as a result.
PAGE 17
DS2770 1-WIRE BUS INTERFACE CIRCUITRY Figure 16 BUS MASTER 2.0V < VPULLUP < 5.5V DS2770 1-WIRE PORT RX RX A IPD Typ. TX TX RX = Receive TX = Transmit TRANSACTION SEQUENCE The protocol for accessing the DS2770 through the 1-Wire port is as follows: § Initialization § Net Address command § Function command § Transaction/Data The sections that follow describe each of these steps in detail.
PAGE 18
DS2770 Skip Net Address [CCh]. This command saves time when there is only one DS2770 on the bus by allowing the bus master to issue a Function command without specifying the net address of the slave. If more than one slave device is present on the bus, a subsequent Function command can cause a data collision when all slaves transmit data at the same time. Search Net Address [F0h].
PAGE 19
DS2770 Write Data [6Ch, XX]. This command writes data to the DS2770 starting at memory address XX. The LSb of the data to be stored at address XX can be written immediately after the MSb of the address has been entered. Because the address is automatically incremented after the MSb of each byte written, the LSb to be stored at address XX+1 can be written immediately after the MSb to be stored at address XX.
PAGE 20
DS2770 ROM COMMAND FLOW CHART Figure 17 MASTER Tx RESET PULSE DS2770 Tx PRESENCE PULSE MASTER Tx NET ADDRESS COMMAND 33h or 39h READ NO 55h MATCH YES NO F0h SEARCH YES YES MASTER Tx BIT 0 DS2770 Tx FAMILY CODE 1 BYTE DS2770 Tx BIT 0 DS2770 Tx BIT 0 MASTER TX BIT 0 DS2770 Tx SERIAL NUMBER 6 BYTES BIT 0 MATCH? DS2770 Tx CRC 1 BYTE NO BIT 0 MATCH? NO CCh SKIP NO A5h RESUME YES MASTER Tx FUNCTION COMMAND YES RESUME FLAG SET? YES DS2770 Tx BIT 1 DS2770 Tx BIT 1 MASTER TX BIT 1 BIT 1 MAT
PAGE 21
DS2770 FUNCTION COMMANDS Table 3 COMMAND Read Data Write Data Copy Data Recall Data Lock Refresh Start Charge Stop Charge DESCRIPTION Reads data from memory map starting at address XX Writes data to memory starting at address XX Copies shadow RAM data to EEPROM block that begins with address location XX Recalls EEPROM block that begins with address location XX to shadow RAM Permanently locks the block of lockable EEPROM memory that begins with address location XX Restores Status Register initiali
PAGE 22
DS2770 1-WIRE INITIALIZATION SEQUENCE (RESET PULSE AND PRESENCE PULSE) Figure 18 tRSTL tRSTH tPDH DQ tPDL VCC GND LINE TYPE LEGEND: Bus master active low DS2770 active low Both bus master and DS2770 active low Resistor pullup WRITE TIME SLOTS A write time slot is initiated when the bus master pulls the 1-Wire bus from a logic high (inactive) level to a logic low level. There are two types of write time slots: Write 1 and Write 0.
PAGE 23
DS2770 1-WIRE WRITE AND READ TIME SLOTS Figure 19 WRITE 0 SLOT WRITE 1 SLOT tSLOT tLOW0 tSLOT tLOW1 tREC VCC DQ GND MIN 15ms DS2770 Sample Window TYP MAX 15ms MIN >1ms 30ms 15ms READ 0 SLOT DS2770 Sample Window TYP MAX 15ms 30ms READ 1 SLOT tSLOT tSLOT tREC VCC DQ GND Master Sample Window tRDV Master Sample Window >1ms tRDV LINE TYPE LEGEND: Bus master active low DS2770 active low Both bus master and DS2770 active low Resistor pullup 23 of 27
PAGE 24
DS2770 ABSOLUTE MAXIMUM RATINGS* Voltage on VIN, Relative to Ground Voltage on VCH, CC , UV Voltage on Any Other Pin, Relative to Ground Current Max Iol CC , UV Continuous Internal Sense Current Pulsed Internal Sense Current Operating Temperature Range Storage Temperature Range Soldering Temperature -0.3V to VDD + 0.3V -0.3V to +18V -0.3V to +6V 20mA ±2.
PAGE 25
DS2770 UV Output Low IOL,UV\ VUV\ = 2V UV Output High VOH,UV\ IUV\ = 10mA CC Output Low IOL,CC\ VCC\ = 2V CC Output High VOH,CC\ ICC\ = 10mA Internal CurrentSense Resistance RSNS TA = 25°C DQ Low to ISLEEP time tSLP SYMBOL 10 CONDITION mA VP - 0.5V 5 mA VP - 0.5V 20 25 30 mW 13 s (0°C to 50°C, 2.7V £ VDD £ 4.5V) MIN TYP MAX 0.125 UNITS TLSB Temperature Error TERR Voltage Resolution VLSB 4.
PAGE 26
DS2770 EEPROM RELIABILITY SPECIFICATION PARAMETER (-20°C to 70°C, 2.7V £ VDD £ 5.5V) SYMBOL Copy to EEPROM Time tEEC EEPROM Copy Endurance NEEC CONDITION SYMBOL TYP MAX UNITS 5 10 ms 25,000 ELECTRICAL CHARACTERISTICS: CHARGER FUNCTION PARAMETER MIN cycles NOTES 8 (0°C to 50°C, 2.7V £ VDD £ 5.5V) CONDITION MIN TYP MAX UNITS NOTES Low Battery Voltage Threshold VLB 3.0 V 1 Pulse Charging Voltage Threshold VCV 4.
PAGE 27
DS2770 ELECTRICAL CHARACTERISTICS: 1-WIRE INTERFACE PARAMETER SYMBOL (-20°C to 70°C, 2.7V £ VDD £ 5.