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General Description

The MAX19997A dual downconversion mixer is a versa-

tile, highly integrated diversity downconverter that pro-

vides high linearity and low noise figure for a multitude of

1800MHz to 2900MHz base-station applications. The

MAX19997A fully supports both low- and high-side LO

injection architectures for the 2300MHz to 2900MHz

WiMAX™, LTE, WCS, and MMDS bands, providing

8.7dB gain, +24dBm input IP3, and 10.3dB NF in the

low-side configuration, and 8.7dB gain, +24dBm input

IP3, and 10.4dB NF in the high-side configuration. High-

side LO injection architectures can be further extended

down to 1800MHz with the addition of one tuning ele-

ment (a shunt inductor) on each RF port.

The device integrates baluns in the RF and LO ports,

an LO buffer, two double-balanced mixers, and a pair

of differential IF output amplifiers. The MAX19997A

requires a typical LO drive of 0dBm and a supply cur-

rent guaranteed below 420mA to achieve the targeted

linearity performance.

The MAX19997A is available in a compact 6mm x 6mm,

36-pin thin QFN lead-free package with an exposed

pad. Electrical performance is guaranteed over the

extended temperature range, from T

= -40°C to +85°C.

Applications

2.3GHz WCS Base Stations

2.5GHz WiMAX and LTE Base Stations

2.7GHz MMDS Base Stations

UMTS/WCDMA and cdma2000

3G Base

Stations

PCS1900 and EDGE Base Stations

PHS/PAS Base Stations

Fixed Broadband Wireless Access

Wireless Local Loop

Private Mobile Radios

Military Systems

Features

o 1800MHz to 2900MHz RF Frequency Range

o 1950MHz to 3400MHz LO Frequency Range

o 50MHz to 500MHz IF Frequency Range

o Supports Both Low-Side and High-Side LO

Injection

o 8.7dB Conversion Gain

o +24dBm Input IP3

o 10.3dB Noise Figure

o +11.3dBm Input 1dB Compression Point

o 70dBc Typical 2 x 2 Spurious Rejection at

= -10dBm

o Dual Channels Ideal for Diversity Receiver

Applications

o Integrated LO Buffer

o Integrated LO and RF Baluns for Single-Ended

Inputs

o Low -3dBm to +3dBm LO Drive

o Pin Compatible with the MAX19999 3000MHz to

4000MHz Mixer

o Pin Similar to the MAX9995/MAX9995A and

MAX19995/MAX19995A 1700MHz to 2200MHz

Mixers and the MAX9985/MAX9985A and

MAX19985/MAX19985A 700MHz to 1000MHz

Mixers

o 42dB Channel-to-Channel Isolation

o Single +5.0V or +3.3V Supply

o External Current-Setting Resistors Provide Option

for Operating Device in Reduced-Power/Reduced-

Performance Mode

MAX19997A

Dual, SiGe High-Linearity, 1800MHz to 2900MHz

Downconversion Mixer with LO Buffer

________________________________________________________________

Maxim Integrated Products

Ordering Information

19-4288; Rev 0; 10/08

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,

or visit Maxim’s website at www.maxim-ic.com.

PART TEMP RANGE PIN-PACKAGE

MAX19997AETX+ -40°C to +85°C

36 Thin QFN-EP*

MAX19997AETX+T

-40°C to +85°C

36 Thin QFN-EP*

Denotes a lead-free/RoHS-compliant package.

*EP = Exposed pad.

T = Tape and reel.

Pin Configuration/Functional Block Diagram appears at

end of data sheet.

WiMAX is a trademark of WiMAX Forum.

cdma2000 is a registered trademark of Telecommunications

Industry Association.

Summary of content (34 pages)

PAGE 1
9-4288; Rev 0; 10/08 Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer The MAX19997A dual downconversion mixer is a versatile, highly integrated diversity downconverter that provides high linearity and low noise figure for a multitude of 1800MHz to 2900MHz base-station applications. The MAX19997A fully supports both low- and high-side LO injection architectures for the 2300MHz to 2900MHz WiMAX™, LTE, WCS, and MMDS bands, providing 8.7dB gain, +24dBm input IP3, and 10.
PAGE 2
MAX19997A Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer ABSOLUTE MAXIMUM RATINGS VCC to GND ...........................................................-0.3V to +5.5V RF_, LO to GND.....................................................-0.3V to +0.3V IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M, LO_ADJ_ to GND ...................................-0.3V to (VCC + 0.3V) RF_, LO Input Power ......................................................
PAGE 3
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer PARAMETER RF Frequency Without External Tuning SYMBOL CONDITIONS MIN TYP MAX UNITS fRF (Note 5) 2400 2900 MHz RF Frequency with External Tuning fRF See Table 2 for an outline of tuning elements optimized for 1950MHz operation; optimization at other frequencies within the 1800MHz to 2400MHz range can be achieved with different component values; contact the factory for details 1800 2400 MHz LO Frequency fLO (
PAGE 4
MAX19997A Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer +5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit optimized for the standard RF band (see Table 1), VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 2300MHz to 2900MHz, fLO = 2650MHz to 3250MHz, fIF = 350MHz, fRF < fLO, TC = -40°C to +85°C. Typical values are at VCC = +5.
PAGE 5
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer (Typical Application Circuit optimized for the standard RF band (see Table 1), VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 2300MHz to 2900MHz, fLO = 2650MHz to 3250MHz, fIF = 350MHz, fRF < fLO, TC = -40°C to +85°C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 2600MHz, fLO = 2950MHz, fIF = 350MHz, TC = +25°C, unless otherwise noted.
PAGE 6
MAX19997A Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer +5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit optimized for the standard RF band (see Table 1), VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 2300MHz to 2900MHz, fLO = 1950MHz to 2550MHz, fIF = 350MHz, fRF > fLO, TC = -40°C to +85°C. Typical values are at VCC = +5.
PAGE 7
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer (Typical Application Circuit optimized for the standard RF band (see Table 1), VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 2300MHz to 2900MHz, fLO = 1950MHz to 2550MHz, fIF = 350MHz, fRF > fLO, TC = -40°C to +85°C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 2600MHz, fLO = 2250MHz, fIF = 350MHz, TC = +25°C, unless otherwise noted.
PAGE 8
MAX19997A Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer +3.3V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit optimized for the standard RF band (see Table 1). Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 2600MHz, fLO = 2250MHz, fIF = 350MHz, TC = +25°C, unless otherwise noted.
PAGE 9
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 8 TC = +25°C 7 10 CONVERSION GAIN (dB) 10 CONVERSION GAIN (dB) 9 11 MAX19997A toc02 TC = -30°C 10 CONVERSION GAIN (dB) 11 MAX19997A toc01 11 CONVERSION GAIN vs. RF FREQUENCY (LO > RF, STANDARD RF BAND) CONVERSION GAIN vs. RF FREQUENCY (LO > RF, STANDARD RF BAND) 9 8 PLO = -3dBm, 0dBm, +3dBm MAX19997A toc03 CONVERSION GAIN vs. RF FREQUENCY (LO > RF, STANDARD RF BAND) 9 8 VCC = 4.75V, 5.0V, 5.
PAGE 10
Typical Operating Characteristics (continued) (Typical Application Circuit, standard RF band (see Table 1), VCC = +5.0V, LO is high-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC = +25°C, unless otherwise noted.) TC = +85°C 60 TC = +25°C 70 60 PRF = -5dBm VCC = 4.75V, 5.0V, 5.25V 50 50 2200 TC = -30°C 75 65 PRF = -5dBm 85 65 95 PRF = -5dBm 3000 2200 INPUT P1dB vs.
PAGE 11
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 50 45 40 TC = -30°C, +25°C, +85°C 35 45 40 PLO = -3dBm, 0dBm, +3dBm 2400 2600 2800 RF FREQUENCY (MHz) 3000 MAX19997A toc21 55 50 45 40 VCC = 4.75V, 5.0V, 5.25V 35 30 30 2200 2200 2400 2600 2800 RF FREQUENCY (MHz) 2200 3000 2400 2600 2800 RF FREQUENCY (MHz) 3000 0 0 TC = -30°C -20 -30 TC = +25°C, +85°C -40 PLO = -3dBm, 0dBm, +3dBm -10 -20 -30 3350 2550 RF-TO-IF ISOLATION vs.
PAGE 12
Typical Operating Characteristics (continued) (Typical Application Circuit, standard RF band (see Table 1), VCC = +5.0V, LO is high-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC = +25°C, unless otherwise noted.) -30 -40 -50 -30 PLO = -3dBm, 0dBm, +3dBm -40 2520 2740 2960 3180 3400 -20 -30 VCC = 4.75V, 5.0V, 5.
PAGE 13
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer IF PORT RETURN LOSS vs. IF FREQUENCY (LO > RF, STANDARD RF BAND) 15 20 PLO = -3dBm, 0dBm, +3dBm 5 10 0 5 VCC = 4.75V, 5.0V, 5.25V 15 20 fLO = 2350MHz 10 15 20 25 25 MAX19997A toc36 fLO = 2600MHz IF PORT RETURN LOSS (dB) 10 25 fLO = 2600MHz 30 30 3000 30 50 140 230 320 500 410 50 140 IF FREQUENCY (MHz) LO PORT RETURN LOSS vs.
PAGE 14
Typical Operating Characteristics (continued) (Typical Application Circuit, extended RF band (see Table 2), VCC = +5.0V, LO is high-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC = +25°C, unless otherwise noted.) TC = +85°C PLO = -3dBm, 0dBm, +3dBm 7 TC = +25°C 1900 2000 2100 2200 1900 2000 2100 2200 1900 2000 2100 2200 RF FREQUENCY (MHz) RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND) INPUT IP3 vs.
PAGE 15
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer TC = +25°C 50 60 50 PLO = -3dBm, 0dBm, +3dBm PRF = -5dBm 60 50 VCC = 4.75V, 5.0V, 5.25V TC = -30°C 40 40 1800 1900 2000 2100 2200 1900 2000 2100 2200 2300 1800 1900 2000 2100 2200 2300 RF FREQUENCY (MHz) 3LO-3RF RESPONSE vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND) 3LO-3RF RESPONSE vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND) 3LO-3RF RESPONSE vs.
PAGE 16
Typical Operating Characteristics (continued) (Typical Application Circuit, extended RF band (see Table 2), VCC = +5.0V, LO is high-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC = +25°C, unless otherwise noted.) CHANNEL ISOLATION vs. RF FREQUENCY (LO > RF, EXTENDED RF BAND) 50 45 40 TC = -30°C, +25°C, +85°C 45 40 PLO = -3dBm, 0dBm, +3dBm 1800 1900 2000 2100 2200 50 45 40 VCC = 4.75V, 5.0V, 5.
PAGE 17
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer LO LEAKAGE AT RF PORT vs. LO FREQUENCY (LO > RF, EXTENDED RF BAND) TC = -30°C, +25°C, +85°C -40 -30 PLO = -3dBm, 0dBm, +3dBm -40 -50 -50 2740 2960 3180 LO FREQUENCY (MHz) 2LO LEAKAGE AT RF PORT vs.
PAGE 18
Typical Operating Characteristics (continued) (Typical Application Circuit, extended RF band (see Table 2), VCC = +5.0V, LO is high-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC = +25°C, unless otherwise noted.) 10 15 20 PLO = -3dBm, 0dBm, +3dBm 5 VCC = 4.75V, 5.0V, 5.25V 10 15 20 0 MAX19997A toc74 fLO = 2600MHz IF PORT RETURN LOSS vs. IF FREQUENCY (LO > RF, EXTENDED RF BAND) 5 IF PORT RETURN LOSS (dB) 5 0 MAX19997A toc73 fIF = 350MHz IF PORT RETURN LOSS vs.
PAGE 19
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer CONVERSION GAIN vs. RF FREQUENCY (RF > LO, STANDARD RF BAND) 9 8 TC = +25°C 7 10 CONVERSION GAIN (dB) 10 CONVERSION GAIN (dB) 10 11 MAX19997A toc78 TC = -30°C CONVERSION GAIN (dB) 11 MAX19997A toc77 11 CONVERSION GAIN vs. RF FREQUENCY (RF > LO, STANDARD RF BAND) 9 8 PLO = -3dBm, 0dBm, +3dBm MAX19997A toc79 CONVERSION GAIN vs. RF FREQUENCY (RF > LO, STANDARD RF BAND) 7 9 8 VCC = 4.75V, 5.0V, 5.
PAGE 20
Typical Operating Characteristics (continued) (Typical Application Circuit, standard RF band (see Table 1), VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC = +25°C, unless otherwise noted.) PLO = 0dBm 70 PLO = +3dBm 60 80 2RF-2LO RESPONSE (dBc) 60 PRF = -5dBm 2RF-2LO RESPONSE vs. RF FREQUENCY (RF > LO, STANDARD RF BAND) MAX19997A toc87 2RF-2LO RESPONSE (dBc) 70 80 2RF-2LO RESPONSE (dBc) PRF = -5dBm TC = +85°C MAX19997A toc86 80 2RF-2LO RESPONSE vs.
PAGE 21
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer CHANNEL ISOLATION vs. RF FREQUENCY (RF > LO, STANDARD RF BAND) 45 40 TC = -30°C, +25°C, +85°C 35 45 40 PLO = -3dBm, 0dBm, +3dBm 2400 2600 2800 RF FREQUENCY (MHz) 40 VCC = 4.75V, 5.0V, 5.
PAGE 22
Typical Operating Characteristics (continued) (Typical Application Circuit, standard RF band (see Table 1), VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC = +25°C, unless otherwise noted.
PAGE 23
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 20 PLO = -3dBm, 0dBm, +3dBm 25 VCC = 4.75V, 5.0V, 5.25V 10 15 20 5 2400 2600 2800 RF FREQUENCY (MHz) 3000 50 140 230 320 410 IF FREQUENCY (MHz) LO PORT RETURN LOSS vs. LO FREQUENCY (RF > LO, STANDARD RF BAND) PLO = +3dBm 10 15 PLO = -3dBm 20 fLO = 1850MHz PLO = 0dBm 20 400 VCC = 5.25V 390 140 230 320 410 IF FREQUENCY (MHz) 500 380 370 VCC = 4.75V 360 25 50 500 SUPPLY CURRENT vs.
PAGE 24
Typical Operating Characteristics (continued) (Typical Application Circuit, standard RF band (see Table 1), VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC = +25°C, unless otherwise noted.) 8 7 TC = +85°C 6 PLO = -3dBm, 0dBm, +3dBm 7 2400 2600 2800 3000 MAX19997A toc117 5 2200 2400 2600 2800 2200 3000 2400 2600 2800 INPUT IP3 vs. RF FREQUENCY (RF > LO, STANDARD RF BAND) INPUT IP3 vs. RF FREQUENCY (RF > LO, STANDARD RF BAND) INPUT IP3 vs.
PAGE 25
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer 60 TC = +85°C TC = +25°C 70 PLO = 0dBm 60 2400 2600 2800 3000 VCC = 3.3V 60 VCC = 3.0V 2400 2200 2600 2800 2200 3000 2400 2600 2800 3000 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 3RF-3LO RESPONSE vs. RF FREQUENCY (RF > LO, STANDARD RF BAND) 3RF-3LO RESPONSE vs. RF FREQUENCY (RF > LO, STANDARD RF BAND) 3RF-3LO RESPONSE vs. RF FREQUENCY (RF > LO, STANDARD RF BAND) 75 65 PRF = -5dBm VCC = 3.
PAGE 26
Typical Operating Characteristics (continued) (Typical Application Circuit, standard RF band (see Table 1), VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC = +25°C, unless otherwise noted.) 45 40 TC = -30°C, +25°C, +85°C 35 45 40 PLO = -3dBm, 0dBm, +3dBm 35 2400 2600 2800 3000 50 45 40 VCC = 3.0V, 3.3V, 3.6V 35 30 30 2200 2200 2400 2600 2800 2200 3000 2400 2600 2800 3000 LO LEAKAGE AT IF PORT vs.
PAGE 27
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer TC = -30°C, +25°C, +85°C -30 -40 -20 -30 -40 -10 MAX19997A toc144 VCC = 3.3V LO LEAKAGE AT RF PORT (dBm) -20 -10 MAX19997A toc143 VCC = 3.3V LO LEAKAGE AT RF PORT vs. LO FREQUENCY (RF > LO, STANDARD RF BAND) LO LEAKAGE AT RF PORT vs. LO FREQUENCY (RF > LO, STANDARD RF BAND) LO LEAKAGE AT RF PORT (dBm) LO LEAKAGE AT RF PORT (dBm) -10 MAX19997A toc142 LO LEAKAGE AT RF PORT vs.
PAGE 28
Typical Operating Characteristics (continued) (Typical Application Circuit, standard RF band (see Table 1), VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC = +25°C, unless otherwise noted.) 10 15 20 fLO = 2250MHz 10 20 VCC = 3.0V, 3.3V, 3.6V 30 0 VCC = 3.3V fLO = 2650MHz 10 MAX19997A toc150 PLO = -3dBm, 0dBm, +3dBm 0 IF PORT RETURN LOSS (dB) 5 fIF = 350MHz MAX19997A toc149 VCC = 3.3V IF PORT RETURN LOSS vs.
PAGE 29
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer PIN NAME FUNCTION Main Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor. 1 RFMAIN 2, 5, 6, 8, 12, 15, 18, 23, 28, 31, 34 GND Ground. Not internally connected. Ground these pins or leave unconnected. 3, 7, 20, 22, 24–27 GND Ground. Internally connected to the exposed pad. Connect all ground pins and the exposed pad (EP) together. 4, 10, 16, 21, 30, 36 VCC Power Supply.
PAGE 30
MAX19997A Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer The MAX19997A’s RF range can be further extended down to 1800MHz by adding one additional tuning element on each RF port. For 1950MHz RF applications, connect a 12nH shunt inductor from pins 1 and 9 to ground. Also, change the value of the DC-blocking capacitors (C1 and C8) from 22pF to 1pF. See the Typical Application Circuit for details.
PAGE 31
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer Exposed Pad RF/Thermal Considerations The exposed pad (EP) of the MAX19997A’s 36-pin thin QFN-EP package provides a low thermal-resistance path to the die. It is important that the PCB on which the MAX19997A is mounted be designed to conduct heat from the EP. In addition, provide the EP with a lowinductance path to electrical ground.
PAGE 32
MAX19997A Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer Table 2. Extended RF Band Application Circuit Component Values (Optimized for 1950MHz Operation) DESIGNATION QTY DESCRIPTION COMPONENT SUPPLIER C1, C8 2 1pF microwave capacitors (0402) Murata Electronics North America, Inc. C14 1 1.5pF microwave capacitor (0402) Murata Electronics North America, Inc. C4, C9, C13, C15, C17, C18 6 0.01µF microwave capacitors (0402) Murata Electronics North America, Inc.
PAGE 33
Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer C19 T1 L1* VCC IF MAIN OUTPUT C21 R3 L2* 4:1 R1 VCC C20 VCC RF MAIN INPUT GND C17 28 29 30 VCC GND 31 IFM32 IFM+ 33 IFM_SET GND 34 36 L7** C1 35 VCC C18 LO_ADJ_M R2 + RFMAIN GND GND VCC VCC C4 GND GND GND GND RFDIV RF DIV INPUT 27 1 MAX19997A 2 26 3 25 4 24 5 23 6 22 21 7 EXPOSED PAD 8 20 9 19 GND GND GND GND GND GND VCC VCC C15 GND LO LO C14 18 17 GND VCC 16 15 GND 14
PAGE 34
1 MAX19997A 27 GND 26 GND GND 2 GND 3 25 GND VCC 4 24 GND GND 5 23 GND GND 6 22 GND GND 7 21 VCC 20 GND 19 LO 12 13 14 15 16 17 18 GND IFD+ IFD- GND VCC LO_ADJ_D GND 9 11 RFDIV IFD_SET 8 10 GND EXPOSED PAD PROCESS: SiGe BiCMOS For the latest package outline information and land patterns, go to www.maxim-ic.com/packages.