User Manual

RF01
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bands
IIP3
outl
IIP3 (LNA –6 dB gain) Out of band interferers
f-f
LO
> 4MHz
-12 dBm
CCR Co-channel rejection BER=10
-2
with continuous
wave interferer in the channel
-7 dB
ACS Adjacent channel
selectivity
BER=10
-2
with continuous
wave interferer in the
adjacent channel, mode 0,
channels at 134 kHz, BR=9.6
kbps,
δfFSK=30 kHz
23 dB
P
max
Maximum input
power
LNA: high gain 0 dBm
R
in
RF input impedance
real part (differential)
(Note 2)
LNA gain (0, -14 dB)
LNA gain (-6, -20 dB)
250
500
Ohm
C
in
RF input capacitance 1 pF
RS
a
RSSI accuracy +/-5 dB
RSr RSSI range 46 dB
C
ARSSI
Filter capacitance for
ARSSI
1 nF
RS
step
RSSI programmable
level steps
6 dB
RS
resp
DRSSI response time Until the RSSI output goes
high after the input signal
exceeds the pre-programmed
limit. CARRSI=5nF
500 µs
Note 1: See the BER diagrams in the measurement results section for detailed information.
Note 2: See matching circuit parameters and antenna design guide for information.
AC Characteristics (continued)
Symbol Parameter Conditions/Notes Min Typ Max Units
f
ref
PLL reference frequency (Note 3) 8 10 12 MHz
f
res
PLL frequency resolution Depends on selected bands 2.5 7.5 kHz
t
lock
PLL lock time Frequency error < 1kHz after
10 MHz step
20 us
t
st, P
PLL startup time With running crystal oscillator 250 us
C
xl
Crystal load capacitance, see
crystal selection guide
Programmable in 0.5 pF
steps, tolerance +/-10%
8.5 16 pF
t
POR
Internal POR pulse width
(Note4)
After V
dd
has reached 90% of
final value
50 100 ms
t
sx
Crystal oscillator startup time Crystal ESR < 100 Ohms 5 ms
t
PBt
Wake-up timer clock period Calibrated every 30 seconds 0.96 1.08 ms
t
wake-up
Programmable wake-up time 1 5*10
11
ms
C
in, D
Digital input capacitance 2 pF
t
r, f
Digital output rise/fall time 15 pF pure capacitive load 10 ns
Note 3: Using other than a 10 MHz crystal is not recommended because the crystal referred timing and
frequency parameters will change accordingly.
Note 4: During this period, commands are not accepted by the chip.