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SIR-320ST3F

Sensors

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Infrared light emitting diode, top view type

SIR-320ST3F

The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous

efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,

marking it ideal for compact optical control equipment.

!Applications

Optical control equipment

Light source for remote control devices

!Features

1) Compact (φ3.1mm).

2) High efficiency, high output P

O=9.0mW (IF=50mA).

3) Wide radiation angle θ=±18deg.

4) Emission spectrum well suited to silicon detectors

(λ

P=940nm).

5) Good current-optical output linearity.

6) Long life, high reliability.

!External dimensions (Units : mm)

1.1Max.12.5±1

Min.24

5.2±0.3

2− 0.5

4−0.6

2±0.2

φ3.1±0.2

φ3.8±0.3

(2.5)

Anode

Cathode

Notes:

1. Unspecified tolerance

shall be ±0.2.

2. Dimension in parenthesis are

show for reference.

!Absolute maximum ratings (Ta = 25°C)

Parameter Symbol

IFP

∗

Topr

Tstg

Limits

−25~+85

−40~+85

100

1.0

Unit

°C

Forward current

Reverse voltage

Power dissipation

Pulse forward current

Operating temperature

Storage temperature

∗ Pulse width=0.1msec, duty ratio 1%

Summary of content (3 pages)

PAGE 1
SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. !External dimensions (Units : mm) !Applications Optical control equipment Light source for remote control devices φ3.8±0.3 1.
PAGE 2
SIR-320ST3F Sensors !Electrical and optical characteristics (Ta = 25°C) Symbol Parameter Min. Typ. Max. Unit Conditions Optical output PO − 9 − mW IF=5mA Emitting strength IE 5.6 − − mW/sr IF=5mA Forward voltage VF − 1.2 1.5 V IF=5mA Reverse current IR − − 10 µA VR=3V Peak light emitting wavelength λP − 940 − nm IF=5mA ∆λ − 40 − nm IF=5mA Half-viewing angle θ1 / 2 − ±18 − deg IF=5mA Pesponse time tr·tf − 1.0 − µs IF=5mA fC − 1.
PAGE 3
SIR-320ST3F Sensors 10° 0° 100 30° 80 40° 50° 60 60° 40 70° 20 80° 90° 100 80 60 40 20 RELATIVE EMITTING STRENGTH (%) 20° 0 0 10° 20° 30° 40° 50° 60° 70° 80° 90° ANGULAR DISPLACEMENT : θ(deg) RELATIVE EMITTING STRENGTH (%) Fig.6 Directional pattern 10° 0° 100 30° 80 40° 50° no masking 60 60° 40 70° 20 80° 90° 100 80 60 40 20 RELATIVE EMITTING STRENGTH (%) RELATIVE EMITTING STRENGTH (%) 20° 0 0 10° 20° 30° 40° 50° 60° 70° 80° 90° ANGULAR DISPLACEMENT : θ(deg) Fig.