User Manual

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Features

• Pixel Size: 11 µm x 13 µm (13 µm Pitch)

• High Data Output Rate: 20 MHz

• High Responsivity and Resolution Over a Wide Spectral Range: from Blue (400 nm) up

to Near Infrared (1,100 nm)

• Low Dark Signal and Improved Uniformity

• Low Temporal Noise and High Dynamic Range: Over 6000/1

• Ease and Flexibility of Operation:

– Only Two External Basic Drive Clocks

– Choice of Internal or External Sampling and Reset

• 28-lead DIL Package

• Available with Standard Window or Antireflective Window in the Bandwidth 450 to

750 nm

Pin Identification

Pin Number Symbol Designation

OSA

Video Output Signal A (Odd Channel)

ECHA

A Sample-and-hold Gate Input Channel

ECHA

A Internal Sampling Clock Output Channel

A External Reset Clock Input Channel

Output Amplifier Drain And Internal Logic Supply

10 TP3 Test Point 3

11 TP2 Test Point 2

12 VT Register and Photosensitive Zone DC Bias

13 TP1 Test Point 1

14, 15, 28 V

Substrate Bias (Ground)

16 V

INH

Internal Sampling Clock Inhibiting Input (Dc Bias)

Transfer Clock

20 V

Output Gate DC Bias

B External Reset Clock Output Channel

24 S

ECHB

B Internal Sampling Clock Output Channel

ECHB

B Sample-and-hold Gate Input Channel

26 V

OSB

Video Output Signal B (Even Channel)

27 V

Reset DC Bias

1, 6, 7, 8, 17, 22, 23 DNC Do not Connect

DNC

VOSA

ΦECHA

SΦECHA

ΦRA

DNC

VDD

TP3

TP2

TP1

VSS

VDR

VOSB

ΦECHB

SΦECHB

DNC

ΦRB

VGS

ΦT

ΦP

DNC

VINH

VSS

Linear CCD

Image Sensor

(2048 Pixels)

TH7841A

Rev. 1998A–IMAGE–05/02

Summary of content (12 pages)

PAGE 1
Features • Pixel Size: 11 µm x 13 µm (13 µm Pitch) • High Data Output Rate: 20 MHz • High Responsivity and Resolution Over a Wide Spectral Range: from Blue (400 nm) up to Near Infrared (1,100 nm) • Low Dark Signal and Improved Uniformity • Low Temporal Noise and High Dynamic Range: Over 6000/1 • Ease and Flexibility of Operation: – Only Two External Basic Drive Clocks – Choice of Internal or External Sampling and Reset • 28-lead DIL Package • Available with Standard Window or Antireflective Window in the B
PAGE 2
T Absolute Maximum Ratings* Storage Temperature ..................................... -55°C to +150°C Operating Temperature........................................0°C to +70°C Thermal Cycling..........................................................15°C/mn *NOTICE: Stresses above those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability.
PAGE 3
TH7841A Operating Conditions (T = 25°C) Table 1. DC Characteristics Values Parameter Symbol Min Typ Max Unit Output Amplifier Drain Supply VDD 14 15 16 V Reset DC Bias VDR 12 13 14.5 V Output Gate DC Bias VGS 5.5 6 6.5 V Photosensitive Zone and Register DC Bias VT 6 6.5 7 V (2) Substrate Bias VSS 0.0 0.0 Test Point 1 TP1 VDD V (3) TP2, TP3 VSS V (3) Test Points 2 and 3 Notes: Note (1) 1. It is recommended to maintain VDR at VDD - 2V. 2.
PAGE 4
Figure 1. Timing Diagram — Clocks and Video Output Timing Diagram in Internal Sampling Mode Table 3. Drive Clock Characteristics (see Figure 1) Values Parameter Transfer Clock Register Transport Clock Register Transport Clock Capacitance Symbol ΦPΦT CΦT Logic Min Typ Max Unit Note High 12 13 14 V (1) Low 0.0 0.4 0.6 800 1200 pF Transfer Clock Capacitance CΦP 200 300 pF Note: 1. Transients under 0.
PAGE 5
TH7841A Table 4. Static and Dynamic Electrical Characteristics Values Parameter DC Output Level Output Impedance Symbol Min Typ Max Unit VREF 8 10 12 V ZS Register Single-stage Transfer Efficiency Max. Data Output Frequency Input Current on Pins: 3, 5, 10,11,12, 13, 18, 19, 20, 21, 25 500 Ω Note CTE 99.992 99.998 % VOS = 1V (1) FS max.
PAGE 6
Table 5. Electro-optical Performance Values Parameter Symbol Min Typ Max Unit Note Saturation Output Voltage VSAT 1.3 1.8 2.2 V (1)(2) Saturation Exposure ESAT Responsivity R 2.5 0.33 µJ/cm2 2.9 V/µJ/cm2 Responsivity Unbalance ∆R/R 2 8 % (3) Photo-response No-uniformity Peak-topeak PRNU ±5 ±10 % VOS VOS = 50 mV to 1V CTF 70 % VOS = 0.
PAGE 7
TH7841A Figure 3. CTF Typical Curves (2854 K Source) Electro-optical Performance Without Infrared Cut-off Filtering The TH7841A special semiconductor process exploits the silicon’s high near infrared sensitivity while maintaining good imaging performance in terms of response uniformity and resolution. Typical changes in performance with and without IR filtering are summarized below.
PAGE 8
Table 6. Selection of Operating Modes Option Implementation Note No Sampling ΦECHA (3) and ΦECHB (25) Connected to VDD SΦECHA (4) and SΦECHB (24) Unconnected (1) VINH (16) Connected to V DD Sampling Clocks Connected to ΦECHA - ΦECHB SΦECHA and SΦECHB Unconnected VINH (16) Connected to V DD Sampling By External Clocks Reset Control By External Clocks Note: 1. Drain supply current IDD 15V). See Figure 4 for sampling clock timing (1) Ext. ΦRA on ΦRA (5) Input See Figure 4 for reset clock timing Ext.
PAGE 9
TH7841A Figure 4. Timing Diagram — Clocks and Video Output Timing Diagram With and Without On-chip Sampling Table 8. Performance Improvement with External ΦRA, ΦRB Configuration(1)(2) Values Parameter Saturation Output Voltage Responsivity Dynamic Range Notes: Symbol (Typ) Unit VSAT 2.0 V R 5.0 V/µJ/cm 2 DR 8,000 1. Electro-optical performances obtained with complementary modes are not guaranteed for standard products. 2. The Conversion factor is typically 1.8 µV/e-.
PAGE 10
Packaging Information TH 7841A with standard window. Z = 1.28 ± 0.23 2.16 Notes: 1. If an optical reference is needed, it is recommended to use the window face plane. 2. Variation of Z (azimuth) on the photosensitive area of a device is ≤ 0.1 mm 3. Variation of Y between the first and the last pixel of the linear area is ≤ ±130 µm.
PAGE 11
TH7841A TH7841A With Antireflective Window Improvements in the bandwidth 450-750 nm: • 5% increase in responsivity (typical value: 3.0 V/µJ/cm2). • limitation of the parasitic reflections. Package Drawing 2.16 Notes: 1. If an optical reference is needed, it is recommended to use the window face plane. 2. Variation of Z (azimuth) on the photosensitive area of a device is ≤ 0.1 mm 3. Variation of Y between the first and the last pixel of the linear area is ≤ ±130 µm.
PAGE 12
Atmel Headquarters Atmel Operations Corporate Headquarters Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 487-2600 Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland TEL (41) 26-426-5555 FAX (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimhatsui East Kowloon Hong Kong TEL (852) 2721-9778 FAX (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg.