Features • • • • • • • • • • • • Designed for Digital Photography, Graphic Arts, Medical and Scientific Applications Pixel 14 µm x 14 µm Photomos with 100% Aperture Image Zone: 28.67 mm x 28.
General Description The TH7899M sensor is a 2048 x 2048 full frame Charge Couple Device (CCD) designed for a wide range of applications due to both its operating mode flexibility and its high dynamic range combined with its high resolution. The device is 180° symmetrical so if it is not plugged in the right side it will not be damaged. The nominal photosensitive area is made up of 2048 x 2048 useful pixels split vertically in 4 zones A, B, C and D.
TH7899M Figure 3. Cross Sectional View (AA') of a Photoelement and Potential Profile During Integration Image Area The image area consists of an array of 2048 x 2048 useful photoelements for imaging. The matrix also includes: • 7 columns of dark reference and 5 isolation columns (half covered) on the right and left sides.
Used Readout Register Number of Possible Outputs Configuration to be Used A, B, C and D B 1 or 2 1 Simplified operating conditions 28.67 mm (V) x 28.67 mm (H) A, B, C and D A and B 2 or 4 2 2048 x 2048 optimized data rate 1024 (V) x 2048 (H) 14.34 mm (V) x 28.67 mm (H) C and D B 1 or 2 2 Adapted optical format 1536 (V) x 2048 (H) 1365 (V) x 2048 (H) 21.50 mm (V) x 28.67 mm (H) 19.11 mm (V) x 28.
TH7899M Horizontal Registers The sensor has two readout registers located at the top (register A) and at the bottom (register B) of the image area. They can be driven independently by two phase clocks. Nevertheless to allow a multiple charge transfer direction for the useful pixels (left, right or half left and half right), the two clocks are split into 6 clocks (ΦLAi=1 to 6 for the A register and ΦLBi=1 to 6 for the register B).
Output Amplifiers The TH7899M sensor has four output amplifiers. These are located in each corner of the device at the ends of the readout register. Charge packets are clocked to a precharge capacitor (floating diffusion) whose potential varies linearly with the quantity of charge in each packet. This potential is applied to the input gate of a two stage source follower amplifier and the output signal is read.
TH7899M Maximum Applied Voltage Pins A3 A8 A13 A14 B3 B13 G1 G15 J1 J15 P3 P8 P13 R2 R3 R8 R13 0V (ground) Maximum voltage applied (VGB) with respect to the substrate VSS Pins B5 B4 P12 P11 P4 P5 P6 P7 B12 B11 B10 B9 H15 H1 R6 R5 A10 A11 A5 A4 R12 R11 R4 R7 A9 A12 R1 |VGB| = 15V Pins B6 A6 B7 A7 P9 R9 P10 R10 |VGB| = 12V Pins R1 R15 A1 A15 A2 R14 P2 P14 B2 B14 P1 P15 B1 B15 K1 K15 F1 F15 L1 L15 E1 E15 VGB = -0.3 to 15.5V Pins M1 M15 D1 D15 VGB = -0.
Table 2. Drive Clock Characteristics Parameter Min. Typ. Max. Notes Low High -11V +3.5V -9V +4V -8.5V +4.5V For each A,B,C and D zones, the capacitances to drive are: CΦP1 = CΦP3 = 10 nF CΦP2 = CΦP4 = 13 nF Low High -11V 0V -9V 0.3V -8.5V 0.6V Low High -11V +3.5V -9V +4V -8.5V +5V Low High -2.5V +5.5V -3V +6V -3.5V +6.
2201A–IMAGE–02/02 4 1 Mode 13 2 4 3 A 2 1 Mode 2 4 3 A 2 Mode 1 A 1 3 1 3 1 3 1 3 B Mode 14 B Mode 4 B Mode 3 F TB=Low level F TB=F A 4 2 4 2 4 2 F PA3=F PB3=F PC3=F PD3=F C F PA3=F PB3=F PC3=F PD3=F C F PA4=F PB4=F PC4=F PD4=F B F TA=F A F PA3=F PB3=F PC3=F PD3=F C F PA4=F PB4=F PC4=F PD4=F D F TA=Low level F PA4=F PB4=F PC2=F PD2=F B F PA2=F PB2=F PC2=F PD2=F D F PA2=F PB2=F PC2=F PD2=F B MODES 5-6-15 : 2 4 3 1 2 Mode 15 Mode 6 4 2 1 3 1 Mode 5
Timing Diagram Full Frame Timing Diagram (Without Memory Zone) Readout time Treadout 100 ns min 100 ns min 100 ns min Cleaning period Exposure time see note 1 see figure 5 100 ns min 100 ns min no delay Vertical tranfer of one line 100 ns min Horizontal transfer of one pixel / readout see figure 8 see figure 6 Horizontal summation see figure 7 x vs The video line comprises: · 18 inactive prescans · 7 dark references · 5 isolation elements · 2048 useful pixels (1 output) or 1024 useful pixels (
TH7899M Figure 6. Exposure Time Figure 7.
Figure 8. Horizontal Pixel Summation on ΦS Gate (Two Adjacent Pixel Summation) Figure 9.
TH7899M Frame Transfer Timing (With Memory Zone(s) ) Exposure time 100 ns min 100 ns min 100 ns min Cleaning period see note 1 no delay Vertical tranfer of one line from the memory zone to the readout register Horizontal transfer of one pixel / readout Horizontal summation see figure 9 see figure 11 Memory zone cleaning see note 2 Vertical transfer of one line from the image zone to the memory zone see figure 12 see figure 10 x vs 100 ns min 100 ns min x nbv minimum x hs x hnb/(hs+2) minimum x
Figure 10. Vertical Transfer of One Line From the Memory Zone to the Readout Register Figure 11.
TH7899M Figure 12. Horizontal Transfer Period and Readout Figure 13.
Electrical Performance Table 3. Static And Dynamic Electrical Characteristics Value Parameter DC Output Level Symbol (1) Output Impedance Min Vref (1) Zout Output Amplifier Supply Current(2) CVF1 CVF2 Image Zone To Readout Register Frequency 200 230 6.6 4.2 FV Unit V 250 10 Readout Register And Reset FH Frequency Notes: 1. Measured on VOS1 VOS2 VOS3 and VOS4. 2. Measured in each VDD pin. Electrooptical Performance Max 10.
TH7899M Table 4. Electro-optical Performance Characteristics (Continued) Value Parameter Symbol Min Typ Max Unit Remarks (4) Rms Output Amplifier Noise With a Bandwidth of 80MHz With a Bandwidth < 5MHz N1 N2 20 5 Dark Current MPP Mode Non MPP Mode I01 I02 25 0.6 Dynamic Range Exposure Time =10 ms Readout Time = 2s, FV = 100 kHz Readout Through One Output SNR 9800 Photo-response Non Uniformity, σ PRNU 1 2.
Figure 15. Typical Dynamic Range for Different Operating Conditions The dynamic range is defined by the ratio of the saturation level to the temporal rms noise in darkness. The increase of dynamic range with the vertical frequency is due to the reduction of dark current when the vertical frequency increases (in particular reduction of transfer time where the device is no longer in the MPP mode).
TH7899M Figure 16. Typical Dark Current Noise with Respect to the Temperature for Different Operating Conditions All results have been calculated with a vertical frequency of 100 kHz.
Preliminary Image Grade Specifications Image quality grades are available: • Grade H, ordering code TH7899MCRH • Grade T, ordering code TH7899MCRT • Grade E, ordering code TH7899MCRE These image quality grades are guaranteed at 25°C and provide a good image for applications at ambient temperature. Operating temperature range: 0°C to = 70°C. Blemish Definition • Column: It is one pixel in width and ≥ 7 pixel high defect whose height is constant with light level.
TH7899M T Grade Z1 Type (White or Black) White defects in darkness at 25°C Z1 + Z2 Defects at VSAT/2 White defects in darkness at 25°C 150 2x2 Defects at VSAT/2 600 2x2 Pixels affected by blemishes Area maximum (pixels) Amplitude α α > 40 mV 20% < |α| α > 40 mV 20%< |α| Column number maximum Amplitude α 0 α > 2 mV 5 10% < |α| 0 α > 2 mV 20 10% < |α| E Grade Z1 Type (White or Black) White defects in darkness at 25°C Z1 + Z2 Defects at VSAT/2 White defects in darkness at 25°C 600 5x5 Defe
Outline Drawing The chip center is located at package center. 41.50±0.42 33.00±0.33 3.17±0.30 21.00 4 2.00 5 38.00 Y=35.26±0.1 2 Vos3 Vos4 3 Ztop=2.07±0.25 Zbot=2.70±0.23 Ø0.46±0.05 (82x) Top view 6 4 Vos1 Vos2 1 1.5±0.1 X = 6.42±0.1 4.57±0.25 35.56±0.20 (2.54 x 14) 2.54±0.13 15 14 13 12 11 10 9 8 7 6 5 4 3 5 2 1 4.77±0.45 A B C D E F 25.00±0.25 30.00±0.
TH7899M Pin-out/Pin Designation Pin n° Symbol Designation R6, R5, P4, P5, P6, P7 ΦLB1, ΦLB2, ΦLB3, ΦLB4, ΦLB5, ΦLB6 B readout register clocks A10, A11, B12, B11, B10, B9 ΦLA1, ΦLA2, ΦLA3, ΦLA4, ΦLA5, ΦLA6 A readout register clocks R4, R7, A9, A12 ΦS1, ΦS@, ΦS3, ΦS4 Summing clocks of the output 1, 2, 3 and 4 M1, M15, D1, D15 VGL1, VGL2, VGL3, VGL4 Readout gate bias of the output 1, 2, 3 and 4 L1, L15, E1, E15 VGS1, VGS2, VGS3, VGS4 Output gate bias of the output 1, 2, 3 and 4 N1, N15, C1,
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