User Manual

TSM05N03
30V N-Channel MOSFET
1/4 Version: A12
SOT
-
223
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
30
60 @ V
GS
=10V 5
90 @ V
GS
=4.5V 3.8
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM05N03CW RPG SOT-223 2.5Kpcs / 13” Reel
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current I
D
5 A
Pulsed Drain Current I
DM
±20 A
Continuous Source Current (Diode Conduction)
a,b
I
S
1.7 A
Maximum Power Dissipation
Ta = 25
o
C
P
D
3
W
Ta = 75
o
C 1.1
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
15
o
C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
45
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on a 1 in
2
pad of 2oz Cu, t ≤ 5 sec.
Block Diagram
N-Channel MOSFET
Pin
Definition
:
1. Gate
2. Drain
3. Source