User Manual

TSM05N03
30V N-Channel MOSFET
2/4 Version: A12
Electrical Specifications (Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA BV
DSS
30 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
1 -- 3 V
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
= 30V, V
GS
= 0V I
DSS
-- -- 1.0 µA
On-State Drain Current V
DS
=5V, V
GS
= 10V I
D(ON)
5 -- -- A
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 5A
R
DS(ON)
-- 46 60
mΩ
V
GS
= 4.5V, I
D
= 3.8A -- 70 90
Forward Transconductance V
DS
= 10V, I
D
= 5A g
fs
-- 5 -- S
Diode Forward Voltage I
S
= 2.5A, V
GS
= 0V V
SD
-- -- 1.2 V
Dynamic
b
Total Gate Charge
V
DS
= 10V, I
D
= 5A,
V
GS
= 5V
Q
g
-- 4.2 7
nC
Gate-Source Charge Q
gs
-- 1.9 --
Gate-Drain Charge Q
gd
-- 1.35 --
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 555 --
pF
Output Capacitance C
oss
-- 120 --
Reverse Transfer Capacitance C
rss
-- 60 --
Switching
b.c
Turn-On Delay Time
V
DD
= 10V, R
L
= 15Ω,
I
D
= 1A, V
GEN
= 10V,
R
G
= 6Ω
t
d(on)
-- 4.2 5.5
nS
Turn-On Rise Time t
r
-- 19 25
Turn-Off Delay Time t
d(off)
-- 13 17
Turn-Off Fall Time t
f
-- 9 12
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.