Manual

TSM10P06
60V P-Channel MOSFET
2/4 Version: B13
Electrical Specifications (Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
-60 -- --
V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
-1 -- --
V
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ±100
nA
Zero Gate Voltage Drain Current V
DS
= -60V, V
GS
= 0V I
DSS
-- -- -1
µA
On-State Drain Current
a
V
DS
= -5V, V
GS
= -10V I
D(ON)
-10 -- --
A
Drain-Source On-State Resistance
V
GS
= -10V, I
D
= -5A
R
DS(ON)
-- 130 170
mΩ
V
GS
= -4.5V, I
D
= -2A -- 170 220
Forward Transconductance V
DS
= -15V, I
D
= -3.5A g
fs
-- 6 --
S
Diode Forward Voltage I
S
= -2.5A, V
GS
= 0V V
SD
-- -1.25 -1.5 V
Dynamic
Total Gate Charge
V
DS
= -15V, I
D
= -3.5A,
V
GS
= -10V
Q
g
-- 6 --
nC
Gate-Source Charge Q
gs
-- 1.7 --
Gate-Drain Charge Q
gd
-- 1.5 --
Input Capacitance
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 540 --
pF
Output Capacitance C
oss
-- 60 --
Reverse Transfer Capacitance C
rss
-- 30 --
Switching
Turn-On Delay Time
V
DD
= -15V, R
L
= 15Ω,
I
D
= -1A, V
GEN
= -10V,
R
G
= 6Ω
t
d(on)
--
7
--
nS
Turn-On Rise Time t
r
-- 9 --
Turn-Off Delay Time t
d(off)
-- 19 --
Turn-Off Fall Time t
f
-- 4 --
Notes 1: Pulse test: PW ≤ 300µS, duty cycle ≤ 2%
Notes 2: L=0.1mH,
Notes 3: For DESIGN AID ONLY, not subject to production testing.
Notes 4: Switching time is essentially independent of operating temperature.