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TSM13N50

500V N-Channel Power MOSFET

1/10

Version: C12

220

ITO

220

PRODUCT SUMMARY

(V) R

DS(on)

(Ω) I

(A)

500 0.48 @ V

=10V 13

General Description

The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half

bridge.

Features

● Low R

DS(ON)

0.38Ω (Typ.)

● Low gate charge typical @ 36nC (Typ.)

● Low Crss typical @ 7.7pF (Typ.)

● Fast Switching

Ordering Information

Part No. Package Packing

TSM13N50CZ C0

TO-220 50pcs / Tube

TSM13N50CI C0 ITO-220 50pcs / Tube

Absolute Maximum Rating

(Ta = 25

C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

500 V

Gate-Source Voltage V

±30 V

Continuous Drain Current(T

=25 )℃ I

13 A

Pulsed Drain Current * I

52 A

Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns

Single Pulse Avalanche Energy (Note 2) E

563 mJ

Avalanche Current (Repetitive) (Note 1) I

13 A

Repetitive Avalanche Energy (Note 1) E

18.3 mJ

Operating Junction Temperature T

150 ºC

Storage Temperature Range T

STG

-55 to +150

* Limited by maximum junction temperature

Thermal Performance

Parameter Symbol Limit Unit

Thermal Resistance - Junction to Case

TO-220

RӨ

0.63

C/W ITO-220 2.4

Thermal Resistance - Junction to Ambient TO-220 / ITO-220

RӨ

62.5

Notes: Surface mounted on FR4 board t ≤ 10sec

Block Diagram

N-Channel MOSFET

Definition

1. Gate

2. Drain

3. Source

Summary of content (10 pages)

PAGE 1
TSM13N50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.48 @ VGS =10V 13 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
PAGE 2
TSM13N50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 6.5A RDS(ON) -- 0.38 0.48 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.
PAGE 3
TSM13N50 500V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/10 Version: C12
PAGE 4
TSM13N50 500V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/10 Version: C12
PAGE 5
TSM13N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs.
PAGE 6
TSM13N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Maximum Safe Operating Area Capacitance vs.
PAGE 7
TSM13N50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220) 7/10 Version: C12
PAGE 8
TSM13N50 500V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O P 8/10 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.00 10.50 0.394 0.413 3.74 3.91 0.147 0.154 2.44 2.94 0.096 0.116 -6.35 -0.250 0.38 1.10 0.015 0.043 2.34 2.71 0.092 0.107 4.69 5.43 0.185 0.214 12.70 14.73 0.500 0.580 8.38 9.38 0.330 0.369 14.22 16.51 0.560 0.650 3.55 4.82 0.140 0.190 1.16 1.40 0.046 0.055 27.70 29.62 1.091 1.166 2.03 2.92 0.080 0.115 0.25 0.61 0.010 0.024 5.84 6.85 0.230 0.
PAGE 9
TSM13N50 500V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O 9/10 ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.
PAGE 10
TSM13N50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document.