Owner's manual

TSM190N08
75V N-Channel Power MOSFET
1/4 Version: A12
TO
-
220
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
75 4.2 @ V
GS
=10V 190
Features
● Advanced Trench Technology
● Low R
DS(ON)
4.2mΩ (Max.)
● Low gate charge typical @ 160nC (Typ.)
● Low Crss typical @ 300pF (Typ.)
Block Diagram
N-Channel MOSFET
Ordering Information
Part No. Package Packing
TSM190N08CZ C0 TO-220 50pcs / Tube
Absolute Maximum Rating (Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
75 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current
T
C
=25°C
I
D
190
A
T
C
=70°C 150
T
A
=25°C 17
T
A
=70°C 14
Drain Current-Pulsed Note 1 I
DM
600 A
Avalanche Current, L=0.3mH I
AS
, I
AR
113 A
Avalanche Energy, L=0.3mH E
AS
, E
AR
1900 mJ
Maximum Power Dissipation
T
C
=25°C
P
D
250
W
T
C
=70°C 160
T
A
=25°C 2
T
A
=70°C 1.3
Storage Temperature Range T
STG
-55 to +150 °C
Operating Junction Temperature Range T
J
-55 to +150 °C
* Limited by maximum junction temperature
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case RӨ
JC
0.5
o
C/W
Thermal Resistance - Junction to Ambient RӨ
JA
62.5
o
C/W
Notes: Surface mounted on FR4 board t ≤ 10sec
Pin
Definition
:
1. Gate
2. Drain
3. Source