Owner manual

TSM19N20
200V N-Channel Power MOSFET
1/4 Version: A12
TO
-
252
(DPAK)
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
200 92 @ V
GS
=10V 18
Features
● Advanced Trench Technology
● Low R
DS(ON)
92mΩ (Max.)
● Low gate charge typical @ 55nC (Typ.)
● Low Crss typical @ 73pF (Typ.)
Block Diagram
N-Channel MOSFET
Ordering Information
Part No. Package Packing
TSM19N20CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
200 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current @ T
C
=25°C I
D
18 A
Drain Current Pulsed (Note 1) I
DM
72 A
Avalanche Current I
AS
8 A
Avalanche Energy, L=10mH E
AS
320 mJ
Maximum Power Dissipation @ T
C
=25°C P
D
48 W
Storage Temperature Range T
STG
-55 to +150 °C
Operating Junction Temperature Range T
J
-55 to +150 °C
* Limited by maximum junction temperature
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case RӨ
JC
2.6
o
C/W
Thermal Resistance - Junction to Ambient RӨ
JA
50
o
C/W
Notes: Surface mounted on FR4 board t ≤ 10sec
Pin
Definition
:
1. Gate
2. Drain
3. Source