Owner manual

ManualsBrandsRainbow Electronics ManualsStorageW24257

W24257

32K × 8 CMOS STATIC RAM

Publication Release Date: April 1997

- 1 - Revision A11

8GENERAL DESCRIPTION

The W24257 is a slow speed, low power CMOS static RAM organized as 32768 × 8 bits that operates

on a single 5-volt power supply. This device is manufactured using Winbond's high performance

CMOS technology.

FEATURES

• Low power consumption:

− Active: 400 mW (max.)

− Standby: 250 µW (max.) (LL-version)

500 µW (max.) (L-version)

• Access time: 70/100 nS (max.)

• Single +5V power supply

• Fully static operation

• All inputs and outputs directly TTL compatible

• Three-state outputs

• Battery back-up operation capability

• Data retention voltage: 2V (min.)

• Available packages: 28-pin 600 mil DIP, 330

mil SOP, 300 mil skinny DIP and SOJ

PIN CONFIGURATION

A11

A10

I/O8

I/O7

I/O6

I/O5

I/O4

A13

A14

A12

I/O2

I/O3

I/O1

BLOCK DIAGRAM

A14

I/O1

I/O8

DATA I/O

DECODER

CONTROL

CORE

ARRAY

PIN DESCRIPTION

SYMBOL DESCRIPTION

A0−A14

Address Inputs

I/O1−I/O8

Data Inputs/Outputs

Chip Select Input

Write Enable Input

Output Enable Input

VDD Power Supply

VSS Ground

Summary of content (11 pages)

PAGE 1
W24257 32K × 8 CMOS STATIC RAM 8GENERAL DESCRIPTION The W24257 is a slow speed, low power CMOS static RAM organized as 32768 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology. FEATURES • • • • • Low power consumption: − Active: 400 mW (max.) − Standby: 250 µW (max.) (LL-version) 500 µW (max.) (L-version) Access time: 70/100 nS (max.
PAGE 2
W24257 TRUTH TABLE CS H L L L OE X H L X WE X H H L MODE VDD CURRENT I/O1−I/O8 High Z High Z Data Out Data In Not Selected Output Disable Read Write ISB, ISB1 IDD IDD IDD DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Supply Voltage to VSS Potential Input/Output to VSS Potential Allowable Power Dissipation Storage Temperature RATING -0.5 to +7.0 -0.5 to VDD +0.5 1.
PAGE 3
W24257 CAPACITANCE (VDD = 5V, TA = 25° C, f = 1 MHz) PARAMETER SYM. CONDITIONS MAX. UNIT Input Capacitance CIN VIN = 0V 6 pF Input/Output Capacitance CI/O VOUT = 0V 8 pF Note: These parameters are sampled but not 100% tested. AC CHARACTERISTICS AC Test Conditions PARAMETER CONDITIONS Input Pulse Levels 0.6V to 2.4V Input Rise and Fall Times 5 nS Input and Output Timing Reference Level 1.
PAGE 4
W24257 AC Characteristics, continued (VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C) Read Cycle PARAMETER SYM. W24257-70 W24257-10 UNIT MIN. MAX. MIN. MAX.
PAGE 5
W24257 TIMING WAVEFORMS Read Cycle 1 (Address Controlled) TRC Address TAA TOH TOH DOUT Read Cycle 2 (Chip Select Controlled) CS TACS TCHZ TCLZ DOUT Read Cycle 3 (Output Enable Controlled) T RC Address T AA OE T OH T AOE T OLZ CS T ACS D OUT T CHZ T OHZ TCLZ -5- Publication Release Date: April 1997 Revision A11
PAGE 6
W24257 Timing Waveforms, continued Write Cycle 1 TWC Address T WR OE TCW CS T AW WE T WP TAS TOHZ (1, 4) D OUT T DW TDH D IN Write Cycle 2 (OE = VIL Fixed) T WC Address TWR TCW CS TAW WE T WP TAS TOH TWHZ (1, 4) D OUT TDW (2) (3) TOW TDH DIN Notes: 1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs should not be applied. 2. The data output from DOUT are the same as the data written to DIN during the write cycle. 3.
PAGE 7
W24257 DATA RETENTION CHARACTERISTICS (TA = 0 to 70° C) PARAMETER SYM. TEST CONDITIONS VDD for Data Retention VDR CS ≥ VDD -0.2V Data Retention Current IDDDR CS ≥ VDD -0.2V VDD = 3V Chip Deselect to Data Retention Time TCDR Operation Recovery Time TR MIN. TYP. MAX. UNIT 2.0 - - V LL - - 20 µA L - - 50 0 - - µA nS nS See data retention waveform TRC* TRC* = Read Cycle Time DATA RETENTION WAVEFORM DATA RETENTION MODE VDD 4.5V TCDR CS VDR > = 2V CS1 > = VDD -0.2V VIH 4.
PAGE 8
W24257 BONDING PAD DIAGRAM 6 5 4 3 2 1 A4 A5 A6 A7 A12 A14 28 S-2 28 S-1 V DD V DD 27 26 25 24 23 WE A13 A8 A9 A11 7 22 A3 OE PAD NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14S-1 14S-2 15 16 17 18 19 20 21 22 23 24 25 26 27 28S-1 28S-2 Y X 21 8 A2 A10 9 A1 10 A0 11 I/O1 12 I/O2 13 I/O3 14 S-1 14 S-2 V SS V SS 15 I/O4 16 17 I/O5 I/O6 18 19 I/O7 I/O8 20 CS X -127.08 -377.73 -628.38 -879.03 -1129.68 -1380.33 -1686.51 -1682.01 -1448.10 -1090.80 -877.32 -627.84 -349.
PAGE 9
W24257 PACKAGE DIMENSIONS 28-pin P-DIP Symbol A A1 A2 B B1 c D E E1 e1 L D 28 15 a E1 eA S Dimension in Inches Dimension in mm Min. Nom. Max. Min. Nom. Max. 5.33 0.210 0.010 0.150 0.25 0.155 0.160 3.81 3.94 4.06 0.016 0.018 0.022 0.41 0.46 0.56 0.058 0.060 0.064 1.47 1.52 1.63 0.008 0.010 0.014 0.20 0.25 0.36 1.460 1.470 37.08 37.34 0.590 0.600 0.610 14.99 15.24 15.49 0.540 0.545 0.550 13.72 13.84 13.97 0.090 0.100 0.110 2.29 2.54 2.79 0.120 0.
PAGE 10
W24257 Package Dimensions, continued 28-pin SO Wide Body Symbol 28 A A1 A2 b c D E e HE L LE S y θ 15 e1 E HE L Detail F 14 1 b Dimension in mm Dimension in Inches Min. Nom. Max. Min. Nom. Max. 2.85 0.112 0.004 0.10 0.093 0.098 0.103 2.36 2.49 2.62 0.014 0.016 0.020 0.36 0.41 0.51 0.008 0.010 0.014 0.20 0.25 0.36 0.713 0.733 18.11 18.62 0.326 0.331 8.28 0.336 8.53 8.41 0.044 0.050 0.056 1.12 1.27 1.42 0.453 0.465 0.477 11.51 11.81 12.12 0.028 0.
PAGE 11
W24257 Headquarters Winbond Electronics (H.K.) Ltd. Winbond Electronics North America Corp. Rm. 803, World Trade Square, Tower II, Winbond Memory Lab. No. 4, Creation Rd. III, 123 Hoi Bun Rd., Kwun Tong, Science-Based Industrial Park, Winbond Microelectronics Corp. Kowloon, Hong Kong Hsinchu, Taiwan Winbond Systems Lab. TEL: 852-27513100 TEL: 886-3-5770066 2727 N. First Street, San Jose, FAX: 852-27552064 FAX: 886-3-5792647 CA 95134, U.S.A. http://www.winbond.com.