Preliminary W27E020 256K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E020 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 × 8 bits that operates on a single 5 volt power supply. The W27E020 provides an electrical chip erase function. FEATURES • • • • • High speed access time: 70/90/120 nS (max.) Read operating current: 30 mA (max.) Erase/Programming operating current: 30 mA (max.) Standby current: 1 mA (max.
Preliminary W27E020 FUNCTIONAL DESCRIPTION Read Mode Like conventional UVEPROMs, the W27E020 has two control functions, both of which produce data at the outputs. CE is for power control and chip select. OE controls the output buffer to gate data to the output pins. When addresses are stable, the address access time (TACC) is equal to the delay from CE to output (TCE), and data are available at the outputs TOE after the falling edge of OE, if TACC and TCE timings are met.
Preliminary W27E020 Standby Mode The standby mode significantly reduces VCC current. This mode is entered when CE = VIH. In standby mode, all outputs are in a high impedance state, independent of OE and PGM. Two-line Output Control Since EPROMs are often used in large memory arrays, the W27E020 provides two control inputs for multiple memory connections. Two-line control provides for lowest possible memory power dissipation and ensures that data bus contention will not occur.
Preliminary W27E020 DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER RATING UNIT Ambient Temperature with Power Applied -55 to +125 °C Storage Temperature -65 to +125 °C -0.5 to VCC +0.5 V Voltage on VCC Pin with Respect to Ground -0.5 to +7 V Voltage on VPP Pin with Respect to Ground -0.5 to +14.5 V Voltage on A9 Pin with Respect to Ground -0.5 to +14.
Preliminary W27E020 CAPACITANCE (VCC = 5V, TA = 25° C, f = 1 MHz) PARAMETER SYMBOL CONDITIONS MAX. UNIT Input Capacitance CIN VIN = 0V 6 pF Output Capacitance COUT VOUT = 0V 12 pF AC CHARACTERISTICS AC Test Conditions PARAMETER CONDITIONS 70 nS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load 0 to 3.0V 5 nS 1.5V/1.5V 90/120 nS 0.45V to 2.4V 10 nS 0.8V/2.0V CL = 30 pF, IOH/IOL = -0.4 mA/2.1 mA CL = 100 pF, IOH/IOL = -0.4 mA/2.
Preliminary W27E020 READ OPERATION DC CHARACTERISTICS (Vcc = 5.0V ±10%) PARAMETER SYM. CONDITIONS LIMITS UNIT MIN. TYP. MAX. Input Load Current ILI VIN = 0V to VCC -5 - 5 µA Output Leakage Current ILO VOUT = 0V to VCC -10 - 10 µA Standby VCC Current (TTL input) ISB CE = VIH - - 1.0 mA Standby VCC Current (CMOS input) ISB1 CE = VCC ±0.
Preliminary W27E020 DC PROGRAMMING CHARACTERISTICS (VCC = 5.0V ±10%, TA = 25° C ±5° C) PARAMETER SYM. Input Load Current ILI VCC Program Current ICP CONDITIONS LIMITS UNIT MIN. TYP. MAX. VIN = VIL or VIH - - CE = VIL, OE = VIH, - - ±10 30 µA mA - - 30 mA PGM = VIL VPP Program Current IPP CE = VIL, OE = VIH, Input Low Voltage Input High Voltage Output Low Voltage (Verify) VIL VIH VOL PGM = VIL IOL = 2.1 mA -0.3 2.4 - - 0.8 5.5 0.
Preliminary W27E020 TIMING WAVEFORMS AC Read Waveform VIH Address Address Valid VIL VIH CE VIL TCE VIH TDF OE VIL TOE TOH TACC Outputs High Z Valid Output High Z Erase Waveform Read Manufacturer Read Device SID SID A9 = 12.0V VIL Others = V IL Others = V IL VIH Address A0 = V IL A0=V IH Others=V IL TAS TAS Data DA Blank Check Read Verify Erase Verify Chip Erase A9 = 14.
Preliminary W27E020 Timing Waveforms, continued Programming Waveform Program Verify Program Read Verify VIH Address Stable Address Address Stable Address Valid VIL TDFP TAS Data Data In Stable TDS DOUT TACC DOUT DOUT TAH TDH 12.0V VPP 5.
Preliminary W27E020 SMART PROGRAMMING ALGORITHM Start Address = First Location Vcc = 5V Vpp = 12V X=0 Program One 100 µS Pulse Increment X Yes X = 25? No Fail Verify One Byte Verify One Byte Pass Increment Address No Fail Pass Last Address? Yes Vcc = 5V Vpp = 5V Compare All Bytes to Original Data Fail Pass Fail Device Pass Device - 10 -
Preliminary W27E020 SMART ERASE ALGORITHM Start X=0 Vcc = 5V Vpp = 14V A9 = 14V; A0 = VIL Chip Erase 100 mS Pulse Address = First Location Increment X No Erase Verify Fail X = 20? Pass Yes Increment Address No Last Address? Yes Vcc = 5V Vpp = 5V Compare All Bytes to FFs (HEX) Fail Pass Pass Device Fail Device - 11 - Publication Release Date: December 1997 Revision A1
Preliminary W27E020 ORDERING INFORMATION PART NO. ACCESS TIME (nS) POWER SUPPLY CURRENT MAX. (mA) STANDBY VCC CURRENT MAX. (µA) PACKAGE W27E020-70 70 30 100 600 mil DIP W27E020-90 90 30 100 600 mil DIP W27E020-12 120 30 100 600 mil DIP W27E020P-70 70 30 100 32-pin PLCC W27E020P-90 90 30 100 32-pin PLCC W27E020P-12 120 30 100 32-pin PLCC Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2.
Preliminary W27E020 PACKAGE DIMENSIONS 32-pin P-DIP Symbol A A1 A2 B B1 c D E E1 e1 L D 17 32 E1 Dimension in Inches Dimension in mm Min. Nom. Max. Min. Nom. Max. 0.210 0.010 5.33 0.25 0.150 0.155 0.160 3.81 3.94 4.06 0.016 0.018 0.022 0.41 0.46 0.56 0.048 0.050 0.054 1.22 1.27 1.37 0.008 0.010 0.014 0.20 0.25 0.36 1.650 1.660 41.91 42.16 0.590 0.600 0.610 14.99 15.24 15.49 0.540 0.550 0.555 13.84 13.97 14.10 0.090 0.100 0.110 2.29 2.54 2.79 0.120 0.
Preliminary W27E020 VERSION HISTORY VERSION DATE A1 Dec. 1997 PAGE DESCRIPTION Initial Issued Headquarters Winbond Electronics (H.K.) Ltd. No. 4, Creation Rd. III, Science-Based Industrial Park, Hsinchu, Taiwan TEL: 886-3-5770066 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-7197006 Rm. 803, World Trade Square, Tower II, 123 Hoi Bun Rd., Kwun Tong, Kowloon, Hong Kong TEL: 852-27513100 FAX: 852-27552064 Taipei Office 11F, No. 115, Sec. 3, Min-Sheng East Rd.
