W27E040 512K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 × 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: • • • • • +14V erase/+12V programming voltage • Fully static operation • All inputs and outputs directly TTL/CMOS 90/120 nS (max.) Read operating current: 15 mA (typ.
W27E040 FUNCTIONAL DESCRIPTION Read Mode Like conventional UVEPROMs, the W27E040 has two control functions, both of which produce data at the outputs. CE is for power control and chip select. OE controls the output buffer to gate data to the output pins. When addresses are stable, the address access time (TACC) is equal to the delay from CE to output (TCE), and data are available at the outputs TOE after the falling edge of OE, if TACC and TCE timings are met.
W27E040 Standby Mode The standby mode significantly reduces VCC current. This mode is entered when CE = VIH, VPP = 5V, and VCC = 5V. In standby mode, all outputs are in a high impedance state, independent of OE. Two-line Output Control Since EPROMs are often used in large memory arrays, the W27E040 provides two control inputs for multiple memory connections. Two-line control provides for lowest possible memory power dissipation and ensures that data bus contention will not occur.
W27E040 DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER RATING UNIT Ambient Temperature with Power Applied -55 to +125 °C Storage Temperature -65 to +125 °C -0.5 to VCC +0.5 V Voltage on VPP Pin with Respect to Ground -0.5 to +14.5 V Voltage on A9 Pin with Respect to Ground -0.5 to +14.5 V Voltage on VCC Pin with Respect to Ground -0.
W27E040 AC CHARACTERISTICS AC Test Conditions PARAMETER CONDITIONS Input Pulse Levels 0.45V to 2.4V Input Rise and Fall Times 10 nS Input and Output Timing Reference Level 0.8V/2.0V Output Load CL = 100 pF, IOH/IOL = -0.4 mA/2.1 mA AC Test Load and Waveform +1.3V (IN914) 3.3K ohm DOUT 100 pF (Including Jig and Scope) Input Output Test Points 2.4V 0.45V Test Points 2.0V 2.0V 0.8V 0.
W27E040 READ OPERATION DC CHARACTERISTICS (VCC = 5.0V ±10%, TA = 0 to 70° C) PARAMETER SYM. CONDITIONS LIMITS UNIT MIN. TYP. MAX. Input Load Current ILI VIN = 0V to VCC -5 - 5 µA Output Leakage Current ILO VOUT = 0V to VCC -10 - 10 µA VCC Standby Current ISB CE = VIH - - 1.0 mA ISB1 CE = VCC ±0.2V - 5 100 µA VCC Operating Current ICC CE = VIL IOUT = 0 mA f = 5 MHz - - 30 mA VPP Operating Current IPP VPP = VCC - - 10 µA Input Low Voltage VIL - -0.3 - 0.
W27E040 DC PROGRAMMING CHARACTERISTICS (VCC = 5.0V ±10%, TA = 25° C ±5° C) PARAMETER SYM. CONDITIONS LIMITS UNIT MIN. TYP. MAX. -10 - 10 µA Input Load Current ILI VIN = VIL or VIH VCC Program Current ICP CE = VIL - - 30 mA VPP Program Current IPP CE = VIL - - 30 mA Input Low Voltage VIL - -0.3 - 0.8 V Input High Voltage VIH - 2.4 - 5.5 V Output Low Voltage (Verify) VOL IOL = 2.1 mA - - 0.45 V Output High Voltage (Verify) VOH IOH = -0.4 mA 2.
W27E040 TIMING WAVEFORMS AC Read Waveform VIH Address Valid Address VIL VIH CE VIL TCE VIH OE TDF VIL TOE TOH TACC High Z Outputs Valid Output High Z Erase Waveform Read Read Manufacturer Device SID SID A9 = 12.0V Address A0= V IH Others = VIL VIH VIL Chip Erase A9 = 14.0V Others = VIL Address Stable A0 = VIL Others = VIL TACC Data TACC DA Blank Check Read Verify Erase Verify TAS 86 TARC Address Stable Address Stable TACC TDFP DOUT Data All One TDS DOUT DOUT TAH TAHC 14.
W27E040 Timing Waveforms, continued Programming Waveform Program Verify Program Read Verify VIH Address Stable Address Address Stable Address Valid VIL TDFP TAS Data Data In Stable TDS DOUT TACC DOUT DOUT TAH TDH 12.0V VPP 5.
W27E040 SMART PROGRAMMING ALGORITHM Start Address = First Location Vcc = 5V Vpp = 12V X=0 Program One 100 µS Pulse Increment X Yes X = 25? No Fail Verify One Byte Verify One Byte Pass Increment Address No Fail Pass Last Address? Yes *Program whole chip without data verification and read Vcc = 5V Vpp = 5V Compare All Bytes to Original Data Fail Pass Fail Device Pass Device *: Program the whole chip again without data verification and read.
W27E040 SMART ERASE ALGORITHM Start X=0 Vcc = 5V Vpp = 14V A9 = 14V; A0 = V IL Chip Erase 100 mS Pulse Address = First Location Increment X No Erase Verify Fail X = 20? Pass Yes Increment Address No Last Address? Yes Vcc = 5V Vpp = 5V Compare All Bytes to FFs (HEX) Fail Pass Pass Device Fail Device - 11 - Publication Release Date: May 1997 Revision A1
W27E040 ORDERING INFORMATION PART NO. ACCESS TIME (nS) POWER SUPPLY CURRENT MAX. (mA) STANDBY VCC CURRENT MAX. (µA) PACKAGE W27E040-90 90 30 100 600 mil DIP W27E040-12 120 30 100 600 mil DIP W27E040S-90 90 30 100 450 mil SOP W27E040S-12 120 30 100 450 mil SOP W27E040P-90 90 30 100 32-pin PLCC W27E040P-12 120 30 100 32-pin PLCC W27E040T-90 90 30 100 Type One TSOP W27E040T-12 120 30 100 Type One TSOP Notes: 1.
W27E040 PACKAGE DIMENSIONS 32-pin P-DIP Dimension in inches Symbol A A1 A2 B B1 c D E E1 e1 L D 17 32 E1 16 1 E S c A A2 A1 L Base Plane Seating Plane B e1 eA a B1 Dimension in mm Min. Nom. Max. Min. Nom. Max. 5.33 0.210 0.25 0.010 0.150 0.155 0.160 3.81 3.94 4.06 0.016 0.018 0.022 0.41 0.46 0.56 0.048 0.050 0.054 1.22 1.27 1.37 0.008 0.010 0.014 0.20 0.25 0.36 1.650 1.660 41.91 42.16 0.590 0.600 0.610 14.99 15.24 15.49 0.545 0.550 0.555 13.84 13.
W27E040 Package Dimensions, continued 32-Lead PLCC HE E 4 1 32 30 Dimension In Inches Symbol 5 A A1 A2 b1 b c D E e GD GE HD HE L y 29 GD D HD 21 13 14 20 Min. Nom. c Max. Dimension In mm Min. Nom. 0.140 0.020 Max. 3.56 0.50 0.105 0.110 0.115 2.67 2.80 2.93 0.026 0.028 0.032 0.66 0.71 0.81 0.016 0.018 0.022 0.41 0.46 0.56 0.008 0.010 0.014 0.20 0.25 0.35 0.547 0.550 0.553 13.89 13.97 14.05 0.447 0.450 0.453 11.43 11.51 0.044 0.050 0.056 1.12 1.
W27E040 Headquarters Winbond Electronics (H.K.) Ltd. Rm. 803, World Trade Square, Tower II, No. 4, Creation Rd. III, 123 Hoi Bun Rd., Kwun Tong, Science-Based Industrial Park, Kowloon, Hong Kong Hsinchu, Taiwan TEL: 852-27513100 TEL: 886-3-5770066 FAX: 852-27552064 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-27197006 Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2727 N. First Street, San Jose, CA 95134, U.S.
