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W27E512

64K × 8 ELECTRICALLY ERASABLE EPROM

Publication Release Date: November 1999

- 1 - Revision A8

GENERAL DESCRIPTION

The W27E512 is a high speed, low power Electrically Erasable and Programmable Read Only

Memory organized as 65536

8 bits that operates on a single 5 volt power supply. The W27E512

provides an electrical chip erase function.

FEATURES

• High speed access time:

45/55/70/90/120/150 nS (max.)

• Read operating current: 30 mA (max.)

• Erase/Programming operating current

30 mA (max.)

• Standby current: 1 mA (max.)

• Single 5V power supply

• +14V erase/+12V programming voltage

• Fully static operation

• All inputs and outputs directly TTL/CMOS

compatible

• Three-state outputs

• Available packages: 28-pin 600 mil DIP, 330 mil

SOP, TSOP and 32-pin PLCC

PIN CONFIGURATIONS

A11

OE/Vpp

A10

A14

A13

GND

A12

28-pin

DIP

A15

4321

029

32-pin

PLCC

A11

OE/Vpp

A10

28-pin

TSOP

A10

GND

A11

OE/Vpp

A14

A13

A12

A15

BLOCK DIAGRAM

OE/V

CONTROL

OUTPUT

BUFFER

DECODER

CORE

ARRAY

GND

A15

PIN DESCRIPTION

SYMBOL DESCRIPTION

−

A15

Address Inputs

−

Data Inputs/Outputs

Chip Enable

Output Enable, Program/Erase

Supply Voltage

Power Supply

GND Ground

NC No Connection

Summary of content (16 pages)

PAGE 1
W27E512 64K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E512 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65536 × 8 bits that operates on a single 5 volt power supply. The W27E512 provides an electrical chip erase function. FEATURES • High speed access time: • • • • 45/55/70/90/120/150 nS (max.) Read operating current: 30 mA (max.) Erase/Programming operating current 30 mA (max.) Standby current: 1 mA (max.
PAGE 2
W27E512 FUNCTIONAL DESCRIPTION Read Mode Like conventional UVEPROMs, the W27E512 has two control functions, both of which produce data at the outputs. CE is for power control and chip select. OE/VPP controls the output buffer to gate data to the output pins. When addresses are stable, the address access time (TACC) is equal to the delay from CE to output (TCE), and data are available at the outputs TOE after the falling edge of OE/VPP, if T ACC and TCE timings are met.
PAGE 3
W27E512 Standby Mode The standby mode significantly reduces VCC current. This mode is entered when CE high. In standby mode, all outputs are in a high impedance state, independent of OE /VPP. Two-line Output Control Since EPROMs are often used in large memory arrays, the W27E512 provides two control inputs for multiple memory connections. Two-line control provides for lowest possible memory power dissipation and ensures that data bus contention will not occur.
PAGE 4
W27E512 DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER RATING UNIT Ambient Temperature with Power Applied -55 to +125 °C Storage Temperature -65 to +125 °C -0.5 to VCC +0.5 V Voltage on OE/VPP Pin with Respect to Ground -0.5 to +14.5 V Voltage on A9 Pin with Respect to Ground -0.5 to +14.5 V -0.
PAGE 5
W27E512 CAPACITANCE (VCC = 5V, TA = 25° C, f = 1 MHz) PARAMETER SYMBOL CONDITIONS MAX. UNIT Input Capacitance CIN VIN = 0V 6 pF Output Capacitance COUT VOUT = 0V 12 pF AC CHARACTERISTICS AC Test Conditions PARAMETER CONDITIONS 45/55/70 nS Input Pulse Levels 0 to 3.0V 90/120/150 nS 0.45V to 2.4V Input Rise and Fall Times 5 nS 10 nS Input and Output Timing Reference Level 1.5V/1.5V 0.8V/2.0V Output Load CL = 30 pF, IOH/IOL = -0.4 mA/2.1 mA CL = 100 pF, IOH/IOL = -0.4 mA/2.
PAGE 6
W27E512 READ OPERATION DC CHARACTERISTICS (VCC = 5.0V ±10%, TA = 0 to 70° C) PARAMETER SYM. CONDITIONS LIMITS UNIT MIN. TYP. MAX. Input Load Current ILI VIN = 0V to VCC -5 - 5 µA Output Leakage Current ILO VOUT = 0V to VCC -10 - 10 µA Standby VCC Current (TTL input) ISB CE = VIH - - 1.0 mA Standby VCC Current (CMOS input) ISB1 CE = VCC ±0.2V - 5 100 µA VCC Operating Current ICC CE = VIL IOUT = 0 mA f = 5 MHz - - 30 mA Input Low Voltage VIL - -0.3 - 0.
PAGE 7
W27E512 DC PROGRAMMING CHARACTERISTICS (VCC = 5.0V ±10%, TA = 25° C ±5° C) PARAMETER SYM. Input Load Current ILI VCC Program Current ICP VPP Program Current IPP Input Low Voltage Input High Voltage Output Low Voltage (Verify) Output High Voltage (Verify) A9 Silicon I.D. Voltage VPP Program Voltage VCC Supply Voltage (Program) VIL VIH VOL VOH VID VPP VCP CONDITIONS LIMITS VIN = VIL or VIH CE = VIL, UNIT MIN. -10 TYP. - MAX. 10 - - 30 µA mA - - 30 mA -0.3 2.4 2.4 11.5 11.75 4.5 12.
PAGE 8
W27E512 TIMING WAVEFORMS AC Read Waveform VIH Address Address Valid VIL VIH CE VIL TCE VIH OE/Vpp TDF VIL TOE TOH TACC High Z Outputs Valid Output High Z Erase Waveform Read Read Company Device SID SID A9=12.0V Blank Check Read Verify Erase Verify Chip Erase A9= 14.
PAGE 9
W27E512 Timing Waveforms, continued Programming Waveform Program Program Verify Read Verify VIH Address Stable Address Stable Address VIL TAH TAS Address Stable TAS Address Valid Address Valid TOH TDFP TAH VIH Data In Stable Data VIL TDS TDH TDS Data Out Data Out Data In Stable TACC TDH TDV1 TDV2 TOH 12.
PAGE 10
W27E512 SMART PROGRAMMING ALGORITHM 1 Start Address = First Location Vcc = 5.0V OE/Vpp = 12V Program One 100 µS Pulse Increment Address No Last Address? Yes Address = First Location Increment Address X=0 No Last Address? Yes Pass Fail Verify Byte Increment X No Program One 100 µS Pulse X = 25 ? Vcc = 5.
PAGE 11
W27E512 SMART PROGRAMMING ALGORITHM 2 Start Address = First Location Vcc = 5.
PAGE 12
W27E512 SMART ERASE ALGORITHM Start X=0 Vcc = 5V OE/Vpp = 14V A9 = 14V; A0 = VIL Chip Erase 100 mS Pulse Address = First Location Increment X Vcc = 3.
PAGE 13
W27E512 ORDERING INFORMATION PART NO. ACCESS TIME (nS) OPERATING CURRENT MAX. (mA) STANDBY CURRENT MAX.
PAGE 14
W27E512 PACKAGE DIMENSIONS 28-pin P-DIP Symbol A A1 A2 B B1 c D E E1 e1 L D 28 15 a E1 eA S Dimension in Inches Dimension in mm Min. Nom. Max. Min. Nom. Max. 5.33 0.210 0.010 0.25 0.150 0.155 0.160 3.81 3.94 4.06 0.016 0.018 0.022 0.41 0.46 0.56 0.058 0.060 0.064 1.47 1.52 0.010 0.014 0.20 1.460 1.470 0.008 1.63 0.25 0.36 37.08 37.34 0.590 0.600 0.610 14.99 15.24 15.49 0.540 0.545 0.550 13.72 13.84 13.97 0.090 0.100 0.110 2.29 2.54 2.79 0.120 0.
PAGE 15
W27E512 Package Dimensions, continued 28-pin Standard Type One TSOP HD Dimension In Inches Dimension In mm Min. Min. Symbol D c A A1 A2 b c D E HD e L L1 Y θ 1 e E b A2 A θ Max. Nom. 0.002 Max. 1.20 0.047 0.006 0.05 0.15 0.035 0.040 0.041 0.95 0.007 0.008 0.011 0.17 0.20 0.004 0.006 0.008 0.10 0.15 0.21 11.80 11.90 1.00 1.05 0.27 0.461 0.465 0.469 11.70 0.311 0.315 0.319 7.90 8.00 8.10 0.520 0.528 0.536 13.20 13.40 13.60 0.028 0.50 0.022 0.020 0.
PAGE 16
W27E512 VERSION HISTORY VERSION DATE PAGE A6 Apr. 1997 1, 13, 14 A7 Feb. 1998 1, 2, 3, 5, 6, 13 A8 Nov. 1999 2, 3 DESCRIPTION Add SOP package Add 45/55 nS bining Modify function description ( VIL and VIH): VIL → Low. VIH → High. 4 Modify A9 and VPP Erase Voltage (VID and VPP): 6 Modify VCC description from 13.75V (min) to 13.25V (min) Headquarters Winbond Electronics (H.K.) Ltd. No. 4, Creation Rd.