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Advance Information W27LE520

64K ×× 8 ELECTRICALLY ERASABLE EPROM

Publication Release Date: 4/26/2000

- 1 - Revision A1

GENERAL DESCRIPTION

The W27LE520 is a high speed, low power Electrically Erasable and Programmable Read Only

Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex

with the 8 data lines. To cooperate with the MCU, this device could save the external TTL

component, also cost and space. It requires only one supply in the range of 3.0V to 3.6V or 4.5V to

5.5V in normal read mode. The W27LE520 provides an electrical chip erase function. It will be a

great convenient when you need to change/update the contents in the device.

FEATURES

• High speed access time: 70/90 nS (max.)

• Read operating current: 8 mA/20 mA (max.)

• Erase/Programming operating current

30 mA (max.)

• Standby current: 20 µA /100 µA (max.)

• Unregulated battery power supply range,

3.0V to 3.6V or 4.5V to 5.5V

• +13V erase and programming voltage

• High Reliability CMOS Technology

- 2K V ESD Protection

- 200 mA Latchup Immunity

• Fully static operation

• All inputs and outputs directly LVTTL/CMOS

compatible

• Three-state outputs

• Available packages: 20-pin TSSOP and 20-pin

SOP

PIN CONFIGURATIONS

AD2

AD0

AD7

GND

AD6

AD4

AD1

AD3

AD5

A11

A13

A15

OE/VPP

ALE

A14

A12

TSSOP

Top View

A10

AD5

AD0

A10

AD1

AD3

ALE

A14

A12

GND

AD6

AD4

AD2

A11

A13

A15

SOP

Top View

OE/VPP

VDD

AD7

BLOCK DIAGRAM

ALE

OE / V

CONTROL

GND

AD7 - AD0

OUTPUT

BUFFER

DECODER

A15 - A8

MEMORY

ARRAY

PIN DESCRIPTION

SYMBOL DESCRIPTION

AD0−AD7

Address/Data Inputs/Outputs

A8−A15

Address Inputs

ALE Address Latch Enable

/VPP

Output Enable, Program/Erase

Supply Voltage

VDD Power Supply

GND Ground

Summary of content (16 pages)

PAGE 1
Advance Information W27LE520 64K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27LE520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex with the 8 data lines. To cooperate with the MCU, this device could save the external TTL component, also cost and space. It requires only one supply in the range of 3.0V to 3.6V or 4.5V to 5.5V in normal read mode.
PAGE 2
Advance Information W27LE520 FUNCTIONAL DESCRIPTION Read Mode Unlike conventional UVEPROMs, which has CE and OE two control functions, the W27LE520 has one OE/VPP and one ALE (address_latch_enable) control functions. The ALE makes lower address A[7:0] to be latched in the chip when it goes from high to low, so that the same bus can be used to output data during read mode. i.e. lower address A[7:0] and data bus DQ[7:0] are multiplexed. OE/VPP controls the output buffer to gate data to the output pins.
PAGE 3
Advance Information W27LE520 An EPROM's power switching characteristics require careful device decoupling. System designers are interested in three supply current issues: standby current levels (ISB), active current levels (IDD), and transient current peaks produced by the falling and rising edges of ALE Transient current magnitudes depend on the device output's capacitive and inductive loading. Proper decoupling capacitor selection will suppress transient voltage peaks. Each device should have a 0.
PAGE 4
Advance Information W27LE520 DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Ambient Temperature with Power Applied Storage Temperature Voltage on all Pins with Respect to Ground Except OE/VPP, A9 and VDD Pins Voltage on OE/VPP Pin with Respect to Ground Voltage on A9 Pin with Respect to Ground Voltage VDD Pin with Respect to Ground RATING -55 to +125 -65 to +150 -2.0 to +7.0 UNIT °C °C V -2.0 to +7.0 -2.0 to +7.0 -2.0 to +14.0 V V V Note: 1.
PAGE 5
Advance Information W27LE520 AC CHARACTERISTICS AC Test Conditions PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load CONDITIONS 0V/3V 10 nS 1.5V/1.5V CL = 100 pF, IOH/IOL = -0.4 mA/2.1 mA AC Test Load and Waveforms +1.3V (IN914) 3.3K ohm DOUT 100 pF (Including Jig and Scope) Input Output Test Points Test Points 3V 1.5V 1.
PAGE 6
Advance Information W27LE520 READ OPERATION DC CHARACTERISTICS (VDD = 3.0V to 3.6V or 4.5V to 5.5V, TA = 0 to 70° C) PARAMETER SYM. CONDITIONS MIN. Input Load Current Output Leakage Current Standby VDD Current (CMOS input) ILI ILO ISB VIN = 0V to VDD VOUT = 0V to VDD ALE = VDD ±0.3V, OE/VPP = VDD ±0.3V All others inputs = GND/ VDD ±0.3V VDD = 3.0V to 3.6V VDD = 4.5V to 5.
PAGE 7
Advance Information W27LE520 DC PROGRAMMING CHARACTERISTICS (VDD = 6.5V ±0.25V, TA = 25° C ±5° C) PARAMETER SYM. CONDITIONS LIMITS UNIT MIN. -10 TYP. - MAX. 10 ALE = VIH, - - 30 µA mA OE /VPP = VPP ALE = VIH, - - 30 mA -0.3 2.4 2.4 11.5 12.0 0.8 VDD+0.5 0.45 12.5 V V V V V 12.75 6.25 13.0 6.5 13.25 6.75 V V MIN. LIMITS TYP. MAX.
PAGE 8
Advance Information W27LE520 TIMING WAVEFORMS AC Read Waveform VIH A8-A15 Address Valid VIL TALE ALE VIH VIL TCE VIH TOE OE/Vpp TDF VIL TAS TOH High Z High Z AD0-AD7 TAH Data Address TACC Programming Waveform PROGRAM A[15:8] TAS VIH TAH Address Stable V IL TRPT 13V OE/Vpp PROGRAM (VERIFY) VIH TOES TOEH V IL TVR TVS ALE VIH V IL AD[7:0] VIH V IL TALE TPPW TALE TLAH TLAS Add TDH T DS TPOE Add Data in -8- TDFP Data out
PAGE 9
Advance Information W27LE520 Timing Waveforms, continued Erase Waveform 1 Read Device SID Read Company SID Chip Erase A9 = 13.0V Others = VILor VIH A8, A11 = VIL A10 = VIH Others = VIL or VIH V IH A8 = VIL V IL VDD = 6.5V VDD = 6.5V VDD = 3.3 or 5.0V A9 = 12.0V A[15:8] Erase (Verify) A8 = VIH Address Valid V IH AD[7:0] DA V IL 13.
PAGE 10
Advance Information W27LE520 SMART PROGRAMMING ALGORITHM 1 Start Address = First Location VDD = 6.5V OE/Vpp = 13V Program One 50 µ S Pulse Increment Address No Last Address ? Yes Address = First Location Increment Address X=0 No Last Address ? Pass Fail Verify Byte Increment X Yes Power Down No Program One 50 µ S Pulse X = 25 ? VDD = 3.3 or 5.
PAGE 11
Advance Information W27LE520 SMART PROGRAMMING ALGORITHM 2 Start Address = First Location VDD = 6.5V X=0 Program One 50 µS Pulse OE/Vpp = 13V Increment X X = 25? Yes No Fail Verify One Byte OE/Vpp = V IL Verify One Byte OE/Vpp = V IL Pass Increment Address Fail Pass No Last Address ? Yes Power Down VDD =3.3or5.
PAGE 12
Advance Information W27LE520 SMART ERASE ALGORITHM 1 Start X=0 VDD= 6.5V OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse Address = First Location Increment X V DD= 6.5V OE/Vpp = V IL No Fail Erase Verify X = 20? Pass Yes Increment Address No Last Address? Yes Power Down V DD= 3.3 or 5.
PAGE 13
Advance Information W27LE520 SMART ERASE ALGORITHM 2 Start X=0 VDD = 6.5V OE/Vpp = 13V Program One 50µ S Pulse with Address = 5555(Hex) Data = AA(Hex) Program One 100 mS Pulse with Address = 2AAA(Hex) Data = 10(Hex) Increment X VDD = 6.5V OE/Vpp = V IL No Fail Erase Verify X = 20? Pass Yes Increment Address No Last Address? Yes Power Down VDD = 3.3 or 5.
PAGE 14
Advance Information W27LE520 ORDERING INFORMATION PART NO. W27LE520W-70* W27LE520W-90* W27LE520S-70* W27LE520S-90* ACCESS TIME (nS) 70 90 70 90 OPERATING CURRENT MAX. (mA) 8/20 8/20 8/20 8/20 STANDBY CURRENT MAX. (µ µ A) 20/100 20/100 20/100 20/100 PACKAGE 173mil TSSOP 173mil TSSOP 300mil SOP 300mil SOP Notes: 1. The Part No is preliminary and might be changed after project is consoled. 2. Winbond reserves the right to make changes to its products without prior notice. 3.
PAGE 15
Advance Information W27LE520 PACKAGE DIMENSIONS 20-pin TSSOP c L b Dimension in Inches Symbol E1 E θ e A Nom. Max. Dimension in mm Min. Nom. Max. 0.043 1.10 A A1 0.002 0.006 0.05 0.15 L 0.020 0.028 0.50 0.70 D E E1 0.252 0.260 6.40 6.60 0.246 0.256 6.25 6.50 0.169 0.176 4.30 4.48 0.007 0.012 0.18 0.30 0.003 0.007 0.09 0.18 8 0 b c e θ D Min. 0.65 BSC 0 0.256 BSC 8 A1 20-pin SOP c L b Dimension in Inches Symbol E1 E θ e D A Min. Nom. Max. 0.
PAGE 16
Advance Information W27LE520 VERSION HISTORY VERSION A1 DATE 4/26/2000 PAGE - DESCRIPTION Initial Issued Headquarters Winbond Electronics (H.K.) Ltd. No. 4, Creation Rd. III, Science-Based Industrial Park, Hsinchu, Taiwan TEL: 886-3-5770066 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-7197006 Rm. 803, World Trade Square, Tower II, 123 Hoi Bun Rd., Kwun Tong, Kowloon, Hong Kong TEL: 852-27513100 FAX: 852-27552064 Taipei Office 11F, No. 115, Sec. 3, Min-Sheng East Rd.