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W29C020C

256K x 8 CMOS FLASH MEMORY

Publication Release Date: April 1999

- 1 - Revision A1

GENERAL DESCRIPTION

The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device

can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPP is

not required. The unique cell architecture of the W29C020C results in fast write (erase/program)

operations with extremely low current consumption compared to other comparable 5-volt flash memory

products. The device can also be written (erased and programmed) by using standard EPROM

programmers.

FEATURES

• Single 5-volt write (erase and program)

operations

• Fast page-write operations

− 128 bytes per page

− Page write (erase/program) cycle: 10 mS

(max.)

− Effective byte-write (erase/program) cycle

time: 39 µS

− Optional software-protected data write

• Fast chip-erase operation: 50 mS

• Two 8 KB boot blocks with lockout

• Whole chip cycling:

10K (typ.)

• Read access time: 70/90/120 nS

• Twenty-year data retention

• Software and hardware data protection

• Low power consumption

− Active current: 25 mA (typ.)

− Standby current: 20 µA (typ.)

• Automatic write (erase/program) timing with

internal VPP generation

• End of write (erase/program) detection

− Toggle bit

− Data polling

• Latched address and data

• All inputs and outputs directly TTL compatible

• JEDEC standard byte-wide pinouts

• Available packages: 32-pin 600 mil DIP, 32-pin

TSOP, and 32-pin PLCC

Summary of content (21 pages)

PAGE 1
W29C020C 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C020C results in fast write (erase/program) operations with extremely low current consumption compared to other comparable 5-volt flash memory products.
PAGE 2
W29C020C PIN CONFIGURATIONS BLOCK DIAGRAM NC 1 32 VDD A16 2 31 WE A15 3 30 A17 A12 4 29 A14 A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 32-pin DIP 8 25 A11 A3 9 24 OE A2 10 23 A10 A1 11 22 CE A0 12 21 DQ7 DQ0 13 20 DQ6 DQ1 14 19 DQ5 DQ2 15 18 DQ4 GND 16 17 DQ3 A4 VDD VSS CE OE CONTROL WE 8K Byte Boot Block (Optional) A0 . .
PAGE 3
W29C020C FUNCTIONAL DESCRIPTION Read Mode The read operation of the W29C020C is controlled by CE and OE , both of which have to be low for the host to obtain data from the outputs. CE is used for device selection. When CE is high, the chip is deselected and only standby power will be consumed. OE is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE or OE is high. Refer to the read cycle timing waveforms for further details.
PAGE 4
W29C020C Hardware Data Protection The integrity of the data stored in the W29C020C is also hardware protected in the following ways: (1) Noise/Glitch Protection: A WE pulse of less than 15 nS in duration will not initiate a write cycle. (2) VDD Power Up/Down Detection: The write operation is inhibited when VDD is less than 2.5V. (3) Write Inhibit Mode: Forcing OE low, CE high, or WE high will inhibit the write operation. This prevents inadvertent writes during power-up or power-down periods.
PAGE 5
W29C020C Toggle Bit (DQ6)- Write Status Detection In addition to data polling, the W29C020C provides another method for determining the end of a write cycle. During the internal write cycle, any consecutive attempts to read DQ6 will produce alternating 0's and 1's. When the write cycle is completed, this toggling between 0's and 1's will stop. The device is then ready for the next operation. See Toggle Bit Timing Diagram.
PAGE 6
W29C020C Command Codes for Software Data Protection BYTE SEQUENCE 0 Write 1 Write 2 Write 3 Write 4 Write 5 Write TO ENABLE PROTECTION ADDRESS DATA 5555H AAH 2AAAH 55H 5555H A0H - TO DISABLE PROTECTION ADDRESS DATA 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 20H Software Data Protection Acquisition Flow Software Data Protection Enable Flow (Optional page-load operation) Software Data Protection Disable Flow Load data AA to address 5555 Load data AA to address 5555 Load data 55 to address
PAGE 7
W29C020C Command Codes for Software Chip Erase BYTE SEQUENCE ADDRESS DATA 0 Write 5555H AAH 1 Write 2AAAH 55H 2 Write 5555H 80H 3 Write 5555H AAH 4 Write 2AAAH 55H 5 Write 5555H 10H Software Chip Erase Acquisition Flow Load data AA to address 5555 Load data 55 to address 2AAA Load data 80 to address 5555 Load data AA to address 5555 Load data 55 to address 2AAA Load data 10 to address 5555 Pause 50 mS Exit Notes for software chip erase: Data Format: DQ7−DQ0 (Hex) Address Format:
PAGE 8
W29C020C Command Codes for Product Identification and Boot Block Lockout Detection BYTE SEQUENCE 0 Write ALTERNATE PRODUCT (7) IDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION ENTRY ADDRESS DATA 5555 AA SOFTWARE PRODUCT IDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION ENTRY ADDRESS DATA 5555H AAH SOFTWARE PRODUCT IDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION EXIT ADDRESS DATA 5555H AAH 1 Write 2AAA 55 2AAAH 55H 2AAAH 55H 2 Write 5555 90 5555H 80H 5555H F0H 3 Write - - 5555H AAH - - 4 Write -
PAGE 9
W29C020C Command Codes for Boot Block Lockout Enable BYTE SEQUENCE BOOT BLOCK LOCKOUT FEATURE SET ON FIRST 8K ADDRESS BOOT BLOCK ADDRESS DATA BOOT BLOCK LOCKOUT FEATURE SET ON LAST 8K ADDRESS BOOT BLOCK ADDRESS DATA 0 Write 5555H AAH 5555H AAH 1 Write 2AAAH 55H 2AAAH 55H 2 Write 5555H 80H 5555H 80H 3 Write 5555H AAH 5555H AAH 4 Write 2AAAH 55H 2AAAH 55H 5 Write 5555H 40H 5555H 40H 6 Write 00000H 00H 3FFFFH FFH Pause 10 mS Pause 10 mS Boot Block Lockout Enable Acquis
PAGE 10
W29C020C DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER RATING UNIT -0.5 to +7.0 V 0 to +70 °C -65 to +150 °C D.C. Voltage on Any Pin to Ground Potential Except A9 -0.5 to VDD +1.0 V Transient Voltage (<20 nS ) on Any Pin to Ground Potential -1.0 to VDD +1.0 V -0.5 to 12.
PAGE 11
W29C020C Power-up Timing PARAMETER SYMBOL TYPICAL UNIT Power-up to Read Operation TPU. READ 100 µS Power-up to Write Operation TPU. WRITE 5 mS CAPACITANCE (V DD = 5.0V, TA = 25° C, f = 1 MHz) PARAMETER SYMBOL CONDITIONS MAX. UNIT DQ Pin Capacitance CDQ VDQ = 0V 12 pF Input Pin Capacitance CIN VIN = 0V 6 pF AC CHARACTERISTICS AC Test Conditions (V DD = 5.0V ±10% for 90 nS and 120 nS; V DD = 5.
PAGE 12
W29C020C AC Characteristics, continued Read Cycle Timing Parameters (V DD = 5.0V ±10% for 90 nS and 120 nS; V DD = 5.0V ±5% for 70 nS, V SS = 0V, TA = 0 to 70° C) PARAMETER SYM. W29C020C-70 W29C020C-90 W29C020C-12 UNIT MIN. MAX. MIN. MAX. MIN. MAX.
PAGE 13
W29C020C AC Characteristics, continued DATA Polling Characteristics (1) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Data Hold Time TDH 10 - - nS OE Hold Time TOEH 10 - - nS OE to Output Delay (2) TOE - - - nS Write Recovery Time TWR 0 - - nS MIN. TYP. MAX. UNIT Notes: (1) These parameters are characterized and not 100% tested. (2) See TOE spec in A.C. Read Cycle Timing Parameters.
PAGE 14
W29C020C Timing Waveforms, continued WE Controlled Write Cycle Timing Diagram T WC TAS TAH Address A17-0 TCS CE TCH TOES T OEH OE TWP WE TWPH TDS DQ7-0 Data Valid TDH Internal write starts CE Controlled Write Cycle Timing Diagram TAS T WC T AH Address A17-0 T WPH TC P CE T OES OE TOEH TC S TCH WE T DS DQ7-0 High Z Data Valid T DH Internal Write Starts - 14 -
PAGE 15
W29C020C Timing Waveforms, continued Page Write Cycle Timing Diagram TWC Address A17-0 DQ7-0 CE OE TWP TWPH T BLC WE Byte 0 Byte 1 Byte 2 Byte N-1 Byte N Internal Write Start DATA Polling Timing Diagram Address A17-0 WE CE T OEH OE T DH DQ7 TWR TOE HIGH-Z - 15 - Publication Release Date: April 1999 Revision A1
PAGE 16
W29C020C Timing Waveforms, continued Toggle Bit Timing Diagram WE CE TOEH OE TDH T OE T WR HIGH-Z DQ6 Page Write Timing Diagram Software Data Protection Mode Address A17-0 DQ7-0 5555 2AAA AA TWC Byte/page load cycle starts Three-byte sequence for software data protection mode 5555 55 A0 CE OE TBLC TWP WE TWPH SW0 SW1 SW2 Byte 0 Byte N-1 Byte N (last word) Internal write starts - 16 -
PAGE 17
W29C020C Timing Waveforms, continued Reset Software Data Protection Timing Diagram Six-byte sequence for resetting software data protection mode Address A14-0 DQ7-0 5555 5555 2AAA AA 5555 80 55 AA TWC 2AAA 5555 55 20 SW4 SW5 CE OE TWP TBLC WE TWPH SW0 SW2 SW1 SW3 Internal programming starts Software Chip Erase Timing Diagram Six-byte code for 5V-only software chip erase Address A14-0 DQ7-0 5555 AA 2AAA 5555 55 80 5555 AA 2AAA TWC 5555 55 10 SW4 SW5 CE OE TWP
PAGE 18
W29C020C ORDERING INFORMATION PART NO. W29C020C-12 W29C020CP-12 W29C020C-70B W29C020C-90B W29C020C-12B W29C020CT70B W29C020CT90B W29C020CT12B W29C020CP70B W29C020CP90B W29C020CP12B ACCESS TIME (nS) 120 120 70 90 120 70 90 120 70 90 120 POWER SUPPLY CURRENT MAX. (mA) 50 50 50 50 50 50 50 50 50 50 50 STANDBY VDD CURRENT MAX.
PAGE 19
W29C020C PACKAGE DIMENSIONS 32-pin P-DIP Symbol A A1 A2 B B1 c D E E1 e1 L D 17 32 E1 Dimension in inches 0.210 0.010 1 16 E S 0.155 0.160 3.81 3.94 4.06 0.016 0.018 0.022 0.41 0.46 0.56 0.048 0.050 0.054 1.22 1.27 1.37 0.008 0.010 0.014 0.20 0.25 0.36 1.650 1.660 41.91 42.16 0.590 0.600 0.610 14.99 15.24 15.49 0.545 0.550 0.555 13.84 13.97 14.10 0.090 0.100 0.110 2.29 2.54 2.79 0.120 0.130 0.140 3.05 3.30 3.56 15 0 0.670 16.00 16.51 17.
PAGE 20
W29C020C Package Dimensions, continued 32-pin PLCC HE E 4 1 32 30 Symbol 5 29 GD D HD 13 21 14 20 c A A1 A2 b1 b c D E e GD GE HD HE L y θ Dimension in Inches Min. Nom. Max. Dimension in mm Min. Nom. 0.140 0.020 Max. 3.56 0.50 0.105 0.110 0.115 2.67 2.80 2.93 0.026 0.028 0.032 0.66 0.71 0.81 0.016 0.018 0.022 0.41 0.46 0.56 0.008 0.010 0.014 0.20 0.25 0.35 0.547 0.550 0.553 13.89 13.97 14.05 0.447 0.450 0.453 11.35 11.43 11.51 0.044 0.050 0.
PAGE 21
W29C020C VERSION HISTORY VERSION DATE PAGE A1 Apr. 1999 - DESCRIPTION Initial Issued Headquarters Winbond Electronics (H.K.) Ltd. No. 4, Creation Rd. III, Science-Based Industrial Park, Hsinchu, Taiwan TEL: 886-3-5770066 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-7197006 Rm. 803, World Trade Square, Tower II, 123 Hoi Bun Rd., Kwun Tong, Kowloon, Hong Kong TEL: 852-27513100 FAX: 852-27552064 Winbond Electronics North America Corp. Winbond Memory Lab.