Datasheet
FM24C64B
Rev. 1.3
Feb. 2011 8 of 12
Electrical Specifications
Absolute Maximum Ratings
Symbol Description Ratings
V
DD
Power Supply Voltage with respect to V
SS
-1.0V to +7.0V
V
IN
Voltage on any signal pin with respect to V
SS
-1.0V to +7.0V
and V
IN
< V
DD
+1.0V *
T
STG
Storage Temperature
-55°C to + 125°C
T
LEAD
Lead Temperature (Soldering, 10 seconds)
260° C
V
ESD
Electrostatic Discharge Voltage
- Human Body Model
(AEC-Q100-002 Rev. E)
- Charged Device Model
(AEC-Q100-011 Rev. B)
- Machine Model
(AEC-Q100-003 Rev. E)
4kV
1.25kV
200V
Package Moisture Sensitivity Level MSL-1
* Exception: The “V
IN
< V
DD
+1.0V” restriction does not apply to the SCL and SDA inputs.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of
this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device
reliability.
DC Operating Conditions (T
A
= -40° C to + 85° C, V
DD
= 4.5V to 5.5V unless otherwise specified)
Symbol Parameter Min Typ Max Units Notes
V
DD
Main Power Supply 4.5 5.0 5.5 V
I
DD
VDD Supply Current
@ SCL = 100 kHz
@ SCL = 400 kHz
@ SCL = 1 MHz
100
200
400
µA
µA
µA
1
I
SB
Standby Current 4 10
µ
A
2
I
LI
Input Leakage Current ±1
µ
A
3
I
LO
Output Leakage Current ±1
µ
A
3
V
IL
Input Low Voltage -0.3 0.3 V
DD
V
V
IH
Input High Voltage 0.7 V
DD
V
DD
+ 0.3 V
V
OL
Output Low Voltage
@ I
OL
= 3 mA
0.4 V
R
IN
Input Resistance (WP, A2-A0)
For V
IN
= V
IL
(max)
For V
IN
= V
IH
(min)
40
1
KΩ
MΩ
5
V
HYS
Input Hysteresis 0.05 V
DD
V 4
Notes
1. SCL toggling between V
DD
-0.3V and V
SS
, other inputs V
SS
or V
DD
-0.3V
2. SCL = SDA = V
DD
. All inputs V
SS
or V
DD
. Stop command issued.
3. V
IN
or V
OUT
= V
SS
to V
DD
. Does not apply to WP, A2-A0 pins.
4. This parameter is characterized but not tested.
5. The input pull-down circuit is strong (40KΩ) when the input voltage is below V
IL
and much weaker (1MΩ)
when the input voltage is above V
IH
.