3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 (Previous ADE-208-600) Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 Note: Marking is “YB–“. Rev.2.00 Aug 10, 2005 page 1 of 7 1. Source 2. Gate1 3. Gate2 4.
3SK318 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 ±6 ±6 20 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Symbol V(BR)DSS V(BR)G1SS V(B
SK318 20 200 VG1S = 1.7 V Drain Current ID (mA) 100 50 1.5 V 12 1.4 V 1.3 V 8 1.2 V 1.1 V 4 1.0 V 0.9 V 0 50 100 150 0 200 2 Drain Current vs. Gate1 to Source Voltage Drain Current vs. Gate2 to Source Voltage 20 VDS = 3.5 V 2.5 V 2.0 V 1.5 V 8 4 16 VDS = 3.5 V 1 2 3 4 1.8 V 1.6 V 1.4 V 8 1.2 V 4 0 5 VG1S = 1.0 V 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) Forward Transfer Admittance vs. Gate1 Voltage VDS = 3.5 V 10 2.
3SK318 Noise Figure vs. Drain Current Power Gain vs. Drain to Source Voltage 25 VDS = 3.5 V VG2S = 3 V f = 900 MHz 4 Power Gain PG (dB) Noise Figure NF (dB) 5 3 2 1 0 5 10 15 20 20 15 10 0 25 Noise Figure vs. Drain to Source Voltage 4 20 Power Gain PG (dB) Noise Figure NF (dB) 6 8 10 25 VG2S = 3 V ID = 10 mA f = 900 MHz 3 2 1 2 4 6 8 10 Drain to Source Voltage VDS (V) 5 VDS = 3.5 V f = 900MHz 4 3 2 1 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) Rev.2.
3SK318 S11 Parameter vs. Frequency .8 1 S21 Parameter vs. Frequency 90° 1.5 .6 Scale: 1 / div. 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –90° Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step) Test Condition : VDS = 3.5 V , VG2S = 3 V ID = 10mA 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.002 / div. .
3SK318 S Parameter (VDS = 3.5V, VG2S = 3V, ID = 10mA, Zo = 50Ω) Freq. (MHz) S11 S21 S12 S22 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 MAG. 1.000 0.998 0.997 0.994 0.994 0.986 0.978 0.972 0.969 0.954 0.955 0.941 0.932 0.924 0.919 0.905 ANG. –2.8 –5.8 –9.1 –12.2 –15.1 –18.5 –21.3 –24.1 –27.0 –29.7 –32.8 –35.7 –38.3 –41.3 –44.1 –46.9 MAG. 2.41 2.41 2.39 2.38 2.37 2.35 2.30 2.28 2.26 2.23 2.19 2.17 2.14 2.09 2.07 2.03 ANG. 176.3 171.9 167.6 163.7 159.8 155.5 151.4 147.6 143.6 140.
3SK318 Package Dimensions JEITA Package Code RENESAS Code SC-82A Package Name PTSP0004ZA-A CMPAK-4(T) / CMPAK-4(T)V D MASS[Typ.] 0.006g A e2 e Q b1 c B B E HE LP Reference Symbol L A A x M L1 S A e2 A2 e l1 b5 S b c A A1 y S b2 A3 b e1 b1 b3 c1 c1 c A-A Section l1 b4 B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.35 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.
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