Datasheet

Section 19 Flash Memory (F-ZTAT Version)
Rev. 3.00 Mar 17, 2006 page 773 of 926
REJ09B0283-0300
Section 19 Flash Memory (F-ZTAT Version)
The features of the flash memory included in the flash memory version are summarized below.
The block diagram of the flash memory is shown in figure 19.1.
19.1 Features
• Size
Product Classification ROM Size ROM Address
H8S/2678 Group HD64F2676 256 kbytes H'000000 to H'03FFFF
(Modes 3, 4, 7, 10, and 11)
H'100000 to H'13FFFF
(Modes 5, 6, 13, and 14)
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block units.
The flash memory of 384 kbytes is configured as follows: 64 kbytes × 5 blocks, 32 kbytes × 1
block, and 4 kbytes × 8 blocks. The 256-kbyte flash memory is configured as follows: 64
kbytes × 3 blocks, 32 kbytes × 1 block, and 4 kbytes × 8 blocks. To erase the entire flash
memory, each block must be erased in turn.
• Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
• Two on-board programming modes
Boot mode
User program mode
On-board programming/erasing can be done in boot mode in which the on-chip boot program
is started for erase or programming of the entire flash memory. In normal user program mode,
individual blocks can be erased or programmed.
• Programmer mode
Flash memory can be programmed/erased in programmer mode, using a PROM programmer,
as well as in on-board programming mode.
• Automatic bit rate adjustment
With data transfer in boot mode, the bit rate of this LSI can be automatically adjusted to match
the transfer bit rate of the host.
• Flash memory emulation by RAM
Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates
in real time.
ROMF251A_000020020400