Datasheet

Section 17 ROM
Rev.7.00 Feb. 14, 2007 page 785 of 1108
REJ09B0089-0700
Table 17.69 AC Characteristics Auto-Erase Mode
Condition: V
CC
= 3.3 V ± 0.3 V, V
SS
= 0 V, T
a
= 25˚C ± 5˚C
Code Symbol Min Max Unit
Command write cycle t
nxtc
20 — μs
CE hold time t
ceh
0 — ns
CE setup time t
ces
0 — ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Programming pulse width t
wep
70 — ns
Status polling start time t
ests
1 — ms
Status polling access time t
spa
— 150 ns
Memory erase time t
erase
100 40000 ms
WE rise time t
r
— 30 ns
WE fall time t
f
— 30 ns
CE
A18-0
I/O5-0
I/O6
I/O7
OE
WE
t
ests
t
erase
t
spa
t
dh
t
ds
tf tr
t
wep
t
nxtc
t
nxtc
t
ceh
t
ces
Erase end
identification
signal
Erase normal
and confirmation
signal
H'20 or
H'25
H'00
H'20 or
H'25
Figure 17.93 Timing in Auto-Erase Mode