Datasheet

Section 20 Flash Memory (0.35-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 833 of 1136
REJ09B0109-0700
Section 20 Flash Memory (0.35-μm F-ZTAT Version)
The features of the flash memory included in the flash memory version are summarized below.
The block diagram of the flash memory is shown in figure 20.1.
20.1 Features
• Size
Product Classification ROM Size ROM Address
H8S/2377 HD64F2377 384 kbytes H'000000 to H'05FFFF (Modes 3, 4, and 7)
H8S/2377R HD64F2377R
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. The flash memory of 384 kbytes is configured as follows: 64 kbytes × 5 blocks, 32
kbytes × 1 block, and 4 kbytes × 8 blocks. To erase the entire flash memory, each block must
be erased in turn.
• Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
• Two on-board programming modes
Boot mode
User program mode
On-board programming/erasing can be done in boot mode in which the on-chip boot program
is started for erase or programming of the entire flash memory. In normal user program mode,
individual blocks can be erased or programmed.
• Programmer mode
Flash memory can be programmed/erased in programmer mode, using a PROM programmer,
as well as in on-board programming mode.
• Automatic bit rate adjustment
With data transfer in boot mode, the bit rate of this LSI can be automatically adjusted to match
the transfer bit rate of the host.
• Programming/erasing protection
There are three protect modes, hardware, software, and error protect, which allow protected
status to be designated for flash memory program/erase operations.
ROMF251A_010020020400