Datasheet

Section 21 Flash Memory (0.18-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 862 of 1136
REJ09B0109-0700
• Programming/erasing time
The flash memory programming time is 1 ms (typ) in 128-byte simultaneous programming and
8 µs per byte. The erasing time is 750 ms (typ) per 64-kbyte block.
⎯ User branch
The program processing is performed in 128-byte units. It consists the program pulse
application, verify read, and several other steps. Erasing is performed in one divided-block
units and consists of several steps. The user processing routine can be executed between
the steps, this setting for which is called the use branch addition.
• Number of programming
The number of flash memory programming can be up to 100 times.
• Three on-board programming modes and one off-board programming mode
⎯ Boot mode
This mode is a program mode that uses an on-chip SCI interface. The user MAT and user
boot MAT can be programmed. This mode can automatically adjust the bit rate between
host and this LSI.
⎯ User program mode
The user MAT can be programmed by using the optional interface.
⎯ User boot mode
The user boot program of the optional interface can be made and the user MAT can be
programmed.
• One off-board programming mode
⎯ PROM mode
This mode uses the PROM programmer. The user MAT and user boot MAT can be
programmed.
• Programming/erase protection
There are three types of flash memory programming/erase protection that may be selected:
hardware protection, software protection, and error protection.