Datasheet

Section 26 Electrical Characteristics
Rev.7.00 Mar. 18, 2009 page 1066 of 1136
REJ09B0109-0700
Table 26.41 Flash Memory Characteristics (0.18-μm F-ZTAT Version) (256 kbytes)
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= AV
SS
= 0 V, T
a
= 0°C to 75°C (Programming/Erasing Operating Temperature
Range: Normal Specifications), T
a
= 0°C to 85°C (Programming/Erasing Operating
Temperature Range: Extended Temperature Range Specifications)
Item Symbol Min. Typ. Max. Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
⎯ 1 10 ms/
128 bytes
Erase time
*
1
*
2
*
4
t
E
⎯ 250 1500 ms/
4 kbytes
⎯ 500 4000 ms/
32 kbytes
⎯ 750 6500 ms/
64 kbytes
Programming time (total)
*
1
*
2
*
4
Σtp ⎯ 2 6 s/256 kbytes T
a
= 25°C
Erase time (total)
*
1
*
2
*
4
Σt
E
⎯ 7 20 s/all blocks T
a
= 25°C
Programming and erase time
(total)
*
1
*
2
*
4
Σt
PE
⎯ 9 26 s/256 kbytes T
a
= 25°C
Rewrite times N
WEC
100
*
3
⎯ ⎯ Times
Data storage time
*
4
t
DRP
10 ⎯ ⎯ Year
Notes: 1. Actual programming and erase times are dependent on data characteristics.
2. Programming and erase times do not include data transfer time.
3. The minimum number of times for which all characteristics are guaranteed. (The
guaranteed range is from 1 to the minimum number of times.)
4. Rewrite characteristics are for the operating range including the minimum value.