Datasheet

Section 21 Flash Memory (0.18-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 895 of 1136
REJ09B0109-0700
21.4.2 User Program Mode
The user MAT can be programmed/erased in user program mode. (The user boot MAT cannot be
programmed/erased.)
Programming/erasing is executed by downloading the program in the microcomputer.
The overview flow is shown in figure 21.9.
High voltage is applied to internal flash memory during the programming/erasing processing.
Therefore, transition to reset or hardware standby must not be executed. Doing so may cause
damage or destroy flash memory. If reset is executed accidentally, reset must be released after the
reset input period, which is longer than normal 100 μs.
When programming,
program data is prepared
Programming/erasing
procedure program is
transferred to the on-chip
RAM and executed
Programming/erasing
start
Programming/erasing
end
Programming/erasing is executed only in the on-chip RAM.
However, if program data is in a consecutive area and can be
accessed by the MOV.B instruction of the CPU like SRAM or
ROM, the program data can be in an external space.
After programming/erasing is finished, it must be protected.
1.
2.
Figure 21.9 Programming/Erasing Overview Flow