Datasheet

Section 26 Electrical Characteristics
Rev.7.00 Mar. 18, 2009 page 1033 of 1136
REJ09B0109-0700
26.1.6 Flash Memory Characteristics
Table 26.13 Flash Memory Characteristics (0.35-μm F-ZTAT Version)
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, V
ref
= 3.0 V to AV
CC
,
V
SS
= AV
SS
= 0 V, T
a
= 0°C to 75°C (program/erase operating temperature range:
regular specifications), T
a
= 0°C to 85°C (program/erase operating temperature
range: wide-range specifications)
Item Symbol Min. Typ. Max. Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
⎯ 10 200 ms/
128 bytes
Erase time
*
1
*
3
*
6
t
E
⎯ 50 1000 ms/blocks
Rewrites N
WEC
100
*
7
10000
*
8
⎯ Times
Data retention time t
DRP
10
*
9
⎯ ⎯ Years
Wait time after SWE bit setting
*
1
x 1 ⎯ ⎯ μs
Wait time after PSU bit setting
*
1
y 50 ⎯ ⎯ μs
z1 ⎯ ⎯ 30 μs 1 ≤ n ≤ 6
z2 ⎯ ⎯ 200 μs 7 ≤ n ≤ 1000
Wait time after P bit setting
*
1
*
4
z
z3 ⎯ ⎯ 10 μs Additional
programming
wait
Wait time after P bit clearing
*
1
α 5 ⎯ ⎯ μs
Wait time after PSU bit clearing
*
1
β 5 ⎯ ⎯ μs
Wait time after PV bit setting
*
1
γ 4 ⎯ ⎯ μs
Wait time after H'FF dummy write
*
1
ε 2 ⎯ ⎯ μs
Wait time after PV bit clearing
*
1
η 2 ⎯ ⎯ μs
Wait time after SWE bit clearing
*
1
θ 100 ⎯ ⎯ μs
Programming
Maximum number of programming
*
1
*
4
N ⎯ ⎯ 1000
*
5
Times
Wait time after SWE bit setting
*
1
x 1 ⎯ ⎯ μs
Wait time after ESU bit setting
*
1
y 100 ⎯ ⎯ μs
Wait time after E bit setting
*
1
*
6
z ⎯ ⎯ 10 μs Erase time
wait
Wait time after E bit clearing
*
1
α 10 ⎯ ⎯ μs
Wait time after ESU bit clearing
*
1
β 10 ⎯ ⎯ μs
Wait time after EV bit setting
*
1
γ 20 ⎯ ⎯ μs
Wait time after H'FF dummy write
*
1
ε 2 ⎯ ⎯ μs
Wait time after EV bit clearing
*
1
η 4 ⎯ ⎯ μs
Erasing
Wait time after SWE bit clearing
*
1
θ 100 ⎯ ⎯ μs
Maximum number of erases
*
1
*
6
N ⎯ ⎯ 100 Times