Datasheet
Section 26 Electrical Characteristics
Rev.7.00 Mar. 18, 2009 page 1034 of 1136
REJ09B0109-0700
Notes: 1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 128 bytes. (Indicates the total time during which the P bit is set
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
3. Time to erase one block. (Indicates the time during which the E bit is set in FLMCR1.
Does not include the erase-verify time.)
4. Maximum programming time
t
P
(max) = Σ wait time after P bit setting (z)
N
i=1
5. The maximum number of programming (N) should be set as shown below according to
the actual set value of (z) so as not to exceed the maximum programming time
(t
P
(max)).
The wait time after P bit setting (z) should be changed as follows according to the
number of programming (n).
Number of programming (n)
1 ≤ n ≤ 6 z = 30 µs
7 ≤ n ≤ 1000 z = 200 µs
(Additional programming)
Number of programming (n)
1 ≤ n ≤ 6 z = 10 µs
6. For the maximum erase time (t
E
(max)), the following relationship applies between the
wait time after E bit setting (z) and the maximum number of erases (N):
t
E
(max) = Wait time after E bit setting (z) × maximum number of erases (N)
7. The minimum number of rewrites after which all characteristics are guaranteed.
(Characteristics are guaranteed over a range of one rewrite to the minimum number of
rewrites.)
8. Reference value for 25°C. (Rewrites usually function up to this standard value.)
9. The data retention characteristics within the specification range, including the minimum
number of rewrites.
26.1.7 Usage Note
The F-ZTAT and masked ROM versions both satisfy the electrical characteristics shown in this
manual, but actual electrical characteristic values, operating margins, noise margins, and other
properties may vary due to differences in manufacturing process, on-chip ROM, layout patterns,
and so on.
When system evaluation testing is carried out using the F-ZTAT version, the same evaluation
testing should also be conducted for the masked ROM version when changing over to that version.