Datasheet

Section 22 ROM
R01UH0166EJ0600 Rev. 6.00 Page 969 of 1434
Mar 02, 2011
H8S/2633 Group, H8S/2633 F-ZTAT
TM
,
H8S/2633R F-ZTAT
TM
, H8S/2695
Normal mode
On-board
programming mode
Software programming
disable state
Erase setup
state
Erase mode
Program mode
Erase-verify
mode
Program
setup state
Program-verify
mode
SWE1 = 1
SWE1 = 0
FWE = 1 FWE = 0
E1 = 1
E1 = 0
P1 = 1
P1 = 0
Software
programming
enable
state
*1
*2
*3
*4
Notes: In order to perform a normal read of flash memory, SWE must be cleared to 0. Also note that verify-reads
can be performed during the programming/erasing process.
1. : Normal mode : On-board programming mode
2. Do not make a state transition by setting or clearing multiple bits simultaneously.
3. After a transition from erase mode to the erase setup state, do not enter erase mode without passing
through the software programming enable state.
4. After a transition from program mode to the program setup state, do not enter program mode without
passing through the software programming enable state.
ESU1 = 0
ESU1 = 1
PSU1 = 1
PSU1 = 0
PV1 = 1
PV1 = 0
EV1 = 0
EV1 = 1
Figure 22.12 FLMCR1 Bit Settings and State Transitions
22.7.1 Program Mode
When writing data or programs to flash memory, the program/program-verify flowchart shown in
figure 22.13 should be followed. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 128 bytes at a
time.