Datasheet

Section 25 Electrical Characteristics
(H8S/2633, H8S/2632, H8S/2631, H8S/2633F)
R01UH0166EJ0600 Rev. 6.00 Page 1049 of 1434
Mar 02, 2011
H8S/2633 Group, H8S/2633 F-ZTAT
TM
,
H8S/2633R F-ZTAT
TM
, H8S/2695
Item Symbol Min Typ Max Unit
Test
Conditions
RES, FWE
*
5
| I
in
| — — 1.0 µA Input leakage
current
STBY, NMI,
MD2 to MD0
— — 1.0 µA
V
in
= 0.5 V to
PV
CC
– 0.5 V
Ports 4, 9 — — 1.0 µA V
in
= 0.5 V to
AV
CC
– 0.5 V
Three-state
leakage
current
(off state)
Ports 1, 3, 7,
A to G
⏐I
TSI
⏐ — — 1.0 µA V
in
= 0.5 V to
PV
CC
– 0.5 V
MOS input
pull-up current
Ports A to E –I
P
50 — 300 µA V
in
= 0 V
RES C
in
— — 30 pF
NMI — — 30 pF
Input
capacitance
All input pins
except RES
and NMI
— — 15 pF
V
in
= 0 V
f = 1 MHz
T
a
= 25°C
Current
dissipation
*
2
Normal
operation
I
CC
*
4
— 72
V
CC
= 3.3 V
85
V
CC
= 3.6 V
mA f = 25 MHz
Sleep mode — 58
V
CC
= 3.3 V
75
V
CC
= 3.6 V
mA f = 25 MHz
All modules
stopped
— 50 — mA f = 25 MHz,
V
CC
= 3.3 V
(reference
values)
Medium-speed
mode (φ/32)
— 40 — mA f = 25 MHz,
V
CC
= 3.3 V
(reference
values)
Subactive
mode
— 120
V
CC
= 3.0 V
200 µA Using 32.768
kHz crystal
resonator
Subsleep
mode
— 70
V
CC
= 3.0 V
150 µA Using 32.768
kHz crystal
resonator
Watch mode — 20
V
CC
= 3.0 V
50 µA Using 32.768
kHz crystal
resonator
— 0.1 5.0 µA T
a
≤ 50°C Standby
mode
— — 20 50°C < T
a