Datasheet

Section 25 Electrical Characteristics
(H8S/2633, H8S/2632, H8S/2631, H8S/2633F)
Page 1050 of 1434 R01UH0166EJ0600 Rev. 6.00
Mar 02, 2011
H8S/2633 Group, H8S/2633 F-ZTAT
TM
,
H8S/2633R F-ZTAT
TM
, H8S/2695
Item Symbol Min Typ Max Unit
Test
Conditions
Operating PI
CC
— 17
PV
CC
=
5.0 V
25 mA
Port power
supply
current
*
2
Subclock
operation
— — 50 µA
Standby — 0.01 5.0 T
a
≤ 50 °C
Watch mode — — 20 50 °C < T
a
Analog
power supply
current
During A/D and
D/A
conversion
Al
CC
— 0.6 2.0 mA AV
CC
= 5.0 V
Idle — 0.01 5.0 µA
Reference
power supply
current
During A/D and
D/A
conversion
Al
CC
— 4.0 5.0 mA V
ref
= 5.0 V
Idle — 0.01 5.0 µA
RAM standby voltage
*
3
V
RAM
2.0 — — V
Notes: 1. If the A/D and D/A converters are not used, do not leave the AV
CC
, V
ref
, and AV
SS
pins
open. Apply a voltage between 3.3 V and 5.5 V to the AV
CC
and V
ref
pins by connecting
them to PV
CC
, for instance. Set V
ref
≤ AV
CC
.
2. Current dissipation values are for V
IH
= V
CC
(EXTAL, OSC1), AV
CC
(ports 4 and 9), or
PV
CC
(other), and V
IL
= 0 V, with all output pins unloaded and the on-chip MOS pull-up
transistors in the off state.
3. The values are for V
RAM
≤ V
CC
< 3.0 V, V
IH
min = V
CC
– 0.1 V, and V
IL
max = 0.1 V.
4. I
CC
depends on V
CC
and f as follows:
I
CC
max = 1.0 (mA) + 0.93 (mA/(MHz × V)) × V
CC
× f (normal operation)
I
CC
max = 1.0 (mA) + 0.77 (mA/(MHz × V)) × V
CC
× f (sleep mode)
5. The FWE pin is used only in the flash memory version.