Datasheet

Section 25 Electrical Characteristics
(H8S/2633, H8S/2632, H8S/2631, H8S/2633F)
R01UH0166EJ0600 Rev. 6.00 Page 1085 of 1434
Mar 02, 2011
H8S/2633 Group, H8S/2633 F-ZTAT
TM
,
H8S/2633R F-ZTAT
TM
, H8S/2695
25.6 Flash Memory Characteristics
Table 25.13 Flash Memory Characteristics
Conditions: V
CC
= PLLV
CC
= 3.0 V to 3.6 V, PV
CC
= 4.5 V to 5.5 V, AV
CC
= 4.5 V to 5.5 V,
V
SS
= AV
SS
= PLLV
SS
= 0 V, T
a
= –20°C to +75°C (regular specifications),
T
a
= –40°C to +85°C (wide-range specifications)
Item Symbol Min Typ Max Unit
Programming time
*
1
*
2
*
4
t
P
— 10 200 ms/128 bytes
Erase time
*
1
*
3
*
5
t
E
— 100 1000 ms/block
Number of rewrites N
WEC
— 50 100 Times
Programming Wait time after PSU1 bit setting
*
1
y 50 — — µs
Wait time after P1 bit setting
*
1
*
4
z0 — — 30 µs
z1 — — 10 µs
z2 — — 200 µs
Wait time after P1 bit clearing
*
1
α 5 — — µs
Wait time after PSU1 bit clearing
*
1
β 5 — — µs
Wait time after PV1 bit setting
*
1
γ 4 — — µs
Wait time after H'FF dummy write
*
1
ε 2 — — µs
Wait time after PV1 bit clearing
*
1
η 2 — — µs
Maximum number of writes
*
1
*
4
N1 — — 6 Times
N2 — — 994 Times
Common Wait time after SWE1 bit setting
*
1
x0 1 — — µs
Wait time after SWE1 bit clearing
*
1
x1 100 — — µs
Erasing Wait time after ESU1 bit setting
*
1
y 100 — — µs
Wait time after E1 bit setting
*
1
*
5
z — — 10 ms
Wait time after E1 bit clearing
*
1
α 10 — — µs
Wait time after ESU1 bit clearing
*
1
β 10 — — µs
Wait time after EV1 bit setting
*
1
γ 6 — — µs
Wait time after H'FF dummy write
*
1
ε 2 — — µs
Wait time after EV1 bit clearing
*
1
η 4 — — µs
Maximum number of erases
*
1
*
5
N — — 100 Times
Notes: 1. Follow the program/erase algorithms when making the time settings.