Datasheet

Section 26 Electrical Characteristics
(H8S/2633R)
Page 1122 of 1434 R01UH0166EJ0600 Rev. 6.00
Mar 02, 2011
H8S/2633 Group, H8S/2633 F-ZTAT
TM
,
H8S/2633R F-ZTAT
TM
, H8S/2695
2. Programming time per 128 bytes. (Indicates the total time during which the P1 bit is set
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
3. Time to erase one block. (Indicates the time during which the E1 bit is set in FLMCR1.
Does not include the erase-verify time.)
4. Maximum programming time
t
P
(max) = Wait time after P1 bit setting (z) × maximum number of writes (N)
= (z0 + z1) × N1 + z2 × N2
5. Maximum erase time
t
E
(max) = Wait time after E1 bit setting (z) × maximum number of erases (N)
= Z × N
26.7 Usage Note
Although both the F-ZTAT and mask ROM versions fully meet the electrical specifications listed
in this manual, due to differences in the fabrication process, the on-chip ROM, and the layout
patterns, there will be differences in the actual values of the electrical characteristics, the operating
margins, the noise margins, and other aspects.
Therefore, if a system is evaluated using the F-ZTAT version, a similar evaluation should also be
performed using the mask ROM version.