Datasheet

Section 27 Electrical Characteristics
(H8S/2695)
R01UH0166EJ0600 Rev. 6.00 Page 1143 of 1434
Mar 02, 2011
H8S/2633 Group, H8S/2633 F-ZTAT
TM
,
H8S/2633R F-ZTAT
TM
, H8S/2695
27.4 A/D Conversion Characteristics
Table 27.8 lists the A/D conversion characteristics.
Table 27.8 A/D Conversion Characteristics
Conditions: PV
CC
= 4.5 V to 5.5 V, AV
CC
= 4.5 V to 5.5 V, V
ref
= 4.5 V to AV
CC
,
V
SS
= AV
SS
= PLLV
SS
= 0 V, φ = 2 to 28 MHz, T
a
= –20°C to +75°C (regular
specifications), T
a
= –40°C to +85°C (wide-range specifications)
Item Min Typ Max Unit
Resolution 10 10 10 bits
Conversion time 10 — — µs
Analog input capacitance — — 20 pF
Permissible signal-source impedance — — 5 kΩ
Nonlinearity error — — ±3.5 LSB
Offset error — — ±3.5 LSB
Full-scale error — — ±3.5 LSB
Quantization — ±0.5 — LSB
Absolute accuracy — — ±4.0 LSB
27.5 Usage Note
Although both the F-ZTAT and mask ROM versions fully meet the electrical specifications listed
in this manual, due to differences in the fabrication process, the on-chip ROM, and the layout
patterns, there will be differences in the actual values of the electrical characteristics, the operating
margins, the noise margins, and other aspects.
Therefore, if a system is evaluated using the F-ZTAT version, a similar evaluation should also be
performed using the mask ROM version.