Datasheet

Page xxx of lvi R01UH0166EJ0600 Rev. 6.00
Mar 02, 2011
Item Page Revision (See Manual for Details)
25.6 Flash Memory
Characteristics
Table 25.13 Flash
Memory
Characteristics
1086 Notes amended
Notes 4. Maximum programming time
t
P
(max) = Wait time after P1 bit setting (z) × maximum
number of writes (N) .
= (z0 + z1) × N1 + z2 × N2
5. Maximum erase time
t
E
(max) = Wait time after E1 bit setting (z) × maximum
number of erases (N) = Z × N
26.2 DC
Characteristics
Table 26.2 DC
Characteristics
1088 Table amended
Input high
voltage
RES, STBY,
NMI, FWE
PV
CC
− 0.7 — PV
CC
+ 0.3 V
Item Symbol
V
IH
Min Typ Max
Test
ConditionsUnit
Ports 1, 3, 7,
A to G
2.2 — PV
CC
+ 0.3 V
Ports 4 and 9
EXTAL
AV
CC
× 0.7
PV
CC
× 0.8
—
—
AV
CC
+ 0.3
PV
CC
+ 0.3
V
V
Input low
voltage
RES, STBY,
NMI, FWE
− 0.3 — 0.5 V
V
IL
Ports 1, 3, 4, 7,
9, A to G
− 0.3 — 0.8 V
EXTAL − 0.3 — PV
CC
× 0.2 V
1089 Table amended
Input leakage
current
RES, FWE — — 1.0 V
in
= 0.5 V to
PV
CC
− 0.5 V
V
in
= 0.5 V to
AV
CC
− 0.5 V
μA
Item Symbol
| I
in
|
Min Typ Max
Test
Conditions
Unit
STBY, NMI,
MD2 to MD0
——1.0μA
Ports 4, 9 — — 1.0
μA
1090 Table amended
Analog
power supply
current
During A/D
and D/A
conversion
— 0.6 2.0 AV
CC
= 5.0 VmA
Item Symbol
Al
CC
Min Typ Max
Test
ConditionsUnit
Idle — 0.1 5.0
μA
Reference
power supply
current
During A/D
and D/A
conversion
— 4.0 5.0 V
ref
= 5.0 VmAAl
CC
Idle — 0.1 5.0 μA