Datasheet
Page xxxii of lvi R01UH0166EJ0600 Rev. 6.00
Mar 02, 2011
Item Page Revision (See Manual for Details)
26.6 Flash Memory
Characteristics
Table 26.13 Flash
Memory
Characteristics
1121 Table amended
Number of rewrites
Programming
Item Symbol Min Typ Max Unit
Common
Erasing
Wait time after PSU1 bit setting*
1
Wait time after P1 bit setting*
1
*
4
Wait time after P1 bit clearing*
1
Wait time after PSU1 bit clearing*
1
Wait time after PV1 bit setting*
1
Wait time after H'FF dummy write*
1
Wait time after PV1 bit clearing*
1
Maximum number of writes*
1
*
4
Wait time after SWE1 bit setting*
1
Wait time after SWE1 bit clearing*
1
Wait time after ESU1 bit setting*
1
N
WEC
y
z0
z1
z2
α
β
γ
ε
η
N1
N2
x0
x1
y
—
50
—
—
—
5
5
4
2
2
—
—
1
100
100
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
—
30
10
200
—
—
—
—
—
6
994
—
—
—
Times
μs
μs
μs
μs
μs
μs
μs
μs
μs
Times
Times
μs
μs
μs
1122 Notes amended
Notes 4. Maximum programming time
t
P
(max) = Wait time after P1 bit setting (z) × maximum
number of writes (N) .
= (z0 + z1) × N1 + z2 × N2
5. Maximum erase time
t
E
(max) = Wait time after E1 bit setting (z) × maximum
number of erases (N) = Z × N
27.3 AC
Characteristics
Figure 27.1 Output
Load Circuit
1127 Figure amended
C = 50 pF: Ports 10 to 13, 70 to 73, A to G
(In case of expansion bus control signal output pin setting)
C = 30 pF: All ports except ports 10 to 13, 70 to 73, A to G
R
L
= 2.4 kΩ
R
H
= 12 kΩ
Input/output timing measurement levels
• Low level: 0.8 V
• High level: 2.0 V