Datasheet

Section 22 ROM
R01UH0166EJ0600 Rev. 6.00 Page 943 of 1434
Mar 02, 2011
H8S/2633 Group, H8S/2633 F-ZTAT
TM
,
H8S/2633R F-ZTAT
TM
, H8S/2695
22.4 Flash Memory Overview
22.4.1 Features
The H8S/2633 Group has 256 kbytes of on-chip flash memory. The features of the flash memory
are summarized below.
• Four flash memory operating modes
⎯ Program mode
⎯ Erase mode
⎯ Program-verify mode
⎯ Erase-verify mode
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Block erase (in single-block units) can
be performed. To erase the entire flash memory, each block must be erased in turn. Block
erasing can be performed as required on 4 kbytes, 32 kbytes, and 64 kbytes blocks.
• Programming/erase times
The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming,
equivalent to 78 µs (typ.) per byte, and the erase time is 100 ms (typ.).
• Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
• On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
⎯ Boot mode
⎯ User program mode
• Automatic bit rate adjustment
With data transfer in boot mode, the LSI’s bit rate can be automatically adjusted to match the
transfer bit rate of the host.
• Flash memory emulation in RAM
Flash memory programming can be emulated in real time by overlapping a part of RAM onto
flash memory.
• Protect modes
There are three protect modes, hardware, software, and error protection, which allow protected
status to be designated for flash memory program/erase/verify operations.
• Programmer mode
Flash memory can be programmed/erased in programmer mode, using a PROM programmer,
as well as in on-board programming mode.