Datasheet

Section 23 Electrical Characteristics
Rev. 3.00 Mar. 15, 2006 Page 439 of 526
REJ09B0060-0300
23.2.6 Flash Memory Characteristics
Table 23.8 Flash Memory Characteristics
V
CC
= 3.0 to 5.5 V, V
SS
= 0.0 V, T
a
= –20 to +75°C, unless otherwise indicated.
Test
Values
Item Symbol Condition Min. Typ. Max. Unit
Programming time (per 128 bytes)*
1
*
2
*
4
t
P
 7  ms
Erase time (per block) *
1
*
3
*
6
t
E
 100  ms
Reprogramming count N
WEC
1000 10000  Times
Programming Wait time after SWE
bit setting*
1
x 1   µs
Wait time after PSU
bit setting*
1
y 50   µs
Wait time after P bit setting*
1
*
4
z1 1 ≤ n ≤ 6 28 30 32 µs
z2 7 ≤ n ≤ 1000 198 200 202 µs
z3 Additional-
programming
8 10 12 µs
Wait time after P bit clear*
1
α 5   µs
Wait time after PSU bit clear*
1
β 5   µs
Wait time after PV bit setting*
1
γ 4   µs
Wait time after dummy write*
1
ε 2   µs
Wait time after PV bit clear*
1
η 2   µs
Wait time after SWE bit clear*
1
θ 100   µs
Maximum programming
count *
1
*
4
*
5
N   1000 Times