Datasheet

Section 23 Electrical Characteristics
Rev. 3.00 Mar. 15, 2006 Page 440 of 526
REJ09B0060-0300
Test
Values
Item Symbol Condition Min. Typ. Max. Unit
Erasing Wait time after SWE
bit setting*
1
x 1   µs
Wait time after ESU
bit setting*
1
y 100   µs
Wait time after E bit setting*
1
*
6
z 10  100 ms
Wait time after E bit clear*
1
α 10   µs
Wait time after ESU bit clear*
1
β 10   µs
Wait time after EV bit setting*
1
γ 20   µs
Wait time after dummy write*
1
ε 2   µs
Wait time after EV bit clear*
1
η 4   µs
Wait time after SWE bit clear*
1
θ 100   µs
Maximum erase count *
1
*
6
*
7
N   120 Times
Notes: 1. Make the time settings in accordance with the program/erase algorithms.
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in the
flash memory control register 1 (FLMCR1) is set. The program-verify time is not
included.)
3. The time required to erase one block. (Indicates the time for which the E bit in the flash
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
4. Maximum programming time (t
P
(max.)) = wait time after P bit setting (z) × maximum
programming count (N)
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
and z3, so that it does not exceed the maximum programming time (t
P
(max.)). The wait
time after P bit setting (z1, z2) should be changed as follows according to the value of
the programming count (n).
Programming count (n)
1 ≤ n ≤ 6 z1 = 30 µs
7 ≤ n ≤ 1000 z2 = 200 µs
6. Maximum erase time (t
E
(max.)) = wait time after E bit setting (z) × maximum erase
count (N)
7. Set the maximum erase count (N) according to the actual set value of (z), so that it
does not exceed the maximum erase time (t
E
(max.)).