Datasheet

Section 22 Electrical Characteristics
Rev. 3.00 Sep. 10, 2007 Page 451 of 528
REJ09B0216-0300
22.3.6 Flash Memory Characteristics
Table 22.18 Flash Memory Characteristics
V
CC
= 3.0 to 3.6 V, V
SS
= 0.0 V, T
a
= -20 to +75°C/-40 to +85°C, unless otherwise indicated.
Values
Item Symbol
Test
Condition
Min. Typ. Max. Unit
Programming time (per 128 bytes)*
1
*
2
*
4
t
P
— 7.0 200.0 ms
Erase time (per block) *
1
*
3
*
6
t
E
— 10.0 20.0 ms
Reprogramming count N
WEC
1000 10000 — Times
Programming Wait time after setting SWE
bit*
1
x 1 — — µs
Wait time after setting PSU
bit*
1
y 50 — — µs
Wait time after setting P bit z1 1 ≤ n ≤ 6 28 30 32 µs
*
1
*
4
z2 7 ≤ n ≤ 1000 198 200 202 µs
z3 Additional-
programming
8 10 12 µs
Wait time after clearing P
bit*
1
α 5 — — µs
Wait time after clearing PSU
bit*
1
β 5 — — µs
Wait time after setting PV
bit*
1
γ 4 — — µs
Wait time after dummy
write*
1
ε 2 — — µs
Wait time after clearing PV
bit*
1
η 2 — — µs
Wait time after clearing SWE
bit*
1
θ 100 — — µs
Maximum programming
count *
1
*
4
*
5
N — — 1000 Times