Datasheet

Section 7 ROM
ROM3560A_000120030300 Rev. 2.00 Sep. 23, 2005 Page 87 of 472
REJ09B0160-0200
Section 7 ROM
The features of the 56-kbyte flash memories built into the flash memory (F-ZTAT) version are
summarized below.
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. The flash memory is configured as follows: 1 kbyte × 4 blocks, 28 kbytes × 1 block, 16
kbytes × 1 block, and 8 kbytes × 1 block for H8/36087F. To erase the entire flash memory,
each block must be erased in turn.
• Reprogramming capability
The flash memory can be reprogrammed up to 1,000 times.
• On-board programming
On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user program
mode, individual blocks can be erased or programmed.
• Programmer mode
Flash memory can be programmed/erased in programmer mode using a PROM programmer,
as well as in on-board programming mode.
• Automatic bit rate adjustment
For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match the
transfer bit rate of the host.
• Programming/erasing protection
Sets software protection against flash memory programming/erasing.
• Power-down mode
Operation of the power supply circuit can be partly halted in subactive mode. As a result, flash
memory can be read with low power consumption.
7.1 Block Configuration
Figure 7.1 shows the block configuration of flash memory. The thick lines indicate erasing units,
the narrow lines indicate programming units, and the values are addresses. The 56-kbyte flash
memory is divided into 1 kbyte × 4 blocks, 28 kbytes × 1 block, 16 kbytes × 1 block, and 8 kbytes
× 1 block. Erasing is performed in these units. Programming is performed in 128-byte units
starting from an address with lower eight bits H'00 or H'80.