Datasheet

Table Of Contents
Section 7 ROM
Rev. 2.00 Jul. 04, 2007 Page 127 of 692
REJ09B0309-0200
Section 7 ROM
The features of the 128-Kbyte flash memory built into the flash memory (F-ZTAT) version are
summarized below.
Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block units.
The flash memory is configured as follows: 1 Kbyte × 4 blocks, 28 Kbytes × 1 block, 16
Kbytes × 1 block, 8 Kbytes × 2 blocks, and 32 Kbytes × 2 blocks. To erase the entire flash
memory, each block must be erased in turn.
On-board programming
On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user program
mode, individual blocks can be erased or programmed.
Programmer mode
Flash memory can be programmed/erased in programmer mode using a PROM programmer,
as well as in on-board programming mode.
Automatic bit rate adjustment
For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match the
transfer bit rate of the host.
Programming/erasing protection
Sets software protection against flash memory programming/erasing.
Power-down mode
Operation of the power supply circuit can be partly halted in subactive mode. As a result, flash
memory can be read with low power consumption.
Module standby mode
Use of module standby mode enables this module to be placed in standby mode independently
when not used (for details, see section 6.4, Module Standby Function). When the on-chip
debugger is in use, the bit 1 (FROMCKSTP) in the clock stop register 1 (CKSTPR1) must be
set to 1.