Datasheet

Table Of Contents
Section 7 ROM
Rev. 2.00 Jul. 04, 2007 Page 132 of 692
REJ09B0309-0200
7.2.4 Erase Block Register 2 (EBR2)
EBR2 is a register that is used to specify the flash memory erase area block. EBR2 is initialized to
H'00 when the SWE1 bit in FLMCR1 is 0. Do not set more than one bit in EBR1 and EBR2 to 1 at
a time, or this will cause all the bits in EBR1 and EBR2 to be automatically cleared to 0.
Bit Bit Name
Initial
Value
R/W Description
7 to 2 All 0 R/(W) Reserved
The initial value should not be changed.
1 EB9 0 R/W When this bit is set to 1, 32 Kbytes of EB9 (H'018000 to
H'01FFFF) will be erased.
0 EB8 0 R/W When this bit is set to 1, 32 Kbytes of EB8 (H'010000 to
H'017FFF) will be erased.
7.2.5 Flash Memory Power Control Register (FLPWCR)
FLPWCR enables or disables a transition to the flash memory power-down mode when the LSI
switches to subactive mode. There are two modes: mode in which operation of the power supply
circuit of flash memory is partly halted in power-down mode and flash memory can be read, and
mode in which even if a transition is made to subactive mode, operation of the power supply
circuit of flash memory is retained and flash memory can be read.
Bit Bit Name
Initial
Value
R/W Description
7 PDWND 0 R/W Power-Down Disable
When this bit is 0 and a transition is made to subactive
mode, the flash memory enters the power-down mode.
When this bit is 1, the flash memory remains in the
normal mode even after a transition is made to
subactive mode.
6 to 0 All 0 Reserved
These bits are always read as 0.