Datasheet

Section 26 Electrical Characteristics
Rev. 2.00 Jul. 04, 2007 Page 573 of 692
REJ09B0309-0200
26.2.8 Flash Memory Characteristics
Table 26.10 lists the flash memory characteristics.
Table 26.10 Flash Memory Characteristics
Condition A:
AV
CC
= 2.7 V to 3.6 V, V
SS
= AV
SS
= 0.0 V, V
CC
= 2.7 V to 3.6 V (operating voltage range in
reading), V
CC
= 3.0 V to 3.6 V (operating voltage range in programming/erasing),
Ta = –20 to +75°C (operating temperature range in programming/erasing: regular specifications,
wide-range specifications)
Condition B:
AV
CC
= 1.8 V to 3.6 V, V
SS
= AV
SS
= 0.0 V, V
CC
= 1.8 V to 3.6 V (operating voltage range in
reading), V
CC
= 3.0 V to 3.6 V (operating voltage range in programming/erasing),
Ta = –20 to +50°C (operating temperature range in programming/erasing: regular specifications)
Values
Item Symbol Test Condition Min. Typ. Max. Unit
Programming time (per 128 bytes)*
1
*
2
*
4
t
P
— 7 200 ms
Erasing time (per block)*
1
*
3
*
6
t
E
— 100 1200 ms
1000*
8
*
11
10000*
9
— Maximum programming count N
WEC
100*
8
*
12
10000*
9
—
Times
Data retention time t
DRP
10*
10
— — Years
Wait time after setting
SWE bit*
1
x 1 — — µs
Wait time after setting
PSU bit*
1
y 50 — — µs
z1 1 ≤ n ≤ 6 28 30 32 µs
z2 7 ≤ n ≤ 1000 198 200 202 µs
Wait time after setting P
bit*
1
*
4
z3 Additional-
programming
8 10 12 µs
Wait time after clearing P
bit*
1
α 5 — — µs
Wait time after clearing
PSU bit*
1
β 5 — — µs
Programming
Wait time after setting PV
bit*
1
γ 4 — — µs