Datasheet

Table Of Contents
Section 26 Electrical Characteristics
Rev. 2.00 Jul. 04, 2007 Page 574 of 692
REJ09B0309-0200
Values
Item Symbol Test Condition Min. Typ. Max. Unit
Wait time after dummy
write*
1
ε 2 µs
Wait time after clearing
PV bit*
1
η 2 µs
Wait time after clearing
SWE bit*
1
θ 100 µs
Programming
Maximum programming
count*
1
*
4
*
5
N 1000 Times
Wait time after setting
SWE bit*
1
x 1 µs
Wait time after setting
ESU bit*
1
y 100 µs
Wait time after setting E
bit*
1
*
6
z 10 100 ms
Wait time after clearing E
bit*
1
α 10 — µs
Wait time after clearing
ESU bit*
1
β 10 µs
Wait time after setting EV
bit*
1
γ 20 µs
Wait time after dummy
write*
1
ε 2 µs
Wait time after clearing
EV bit*
1
η 4 µs
Wait time after clearing
SWE bit*
1
θ 100 µs
Erase
Maximum erasing
count*
1
*
6
*
7
N 120 Times
Notes: 1. Make the time settings in accordance with the programming/erasing algorithms.
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in the
flash memory control register 1 (FLMCR1) is set. The programming-verifying time is not
included.)
3. The time required to erase one block. (Indicates the total time for which the E bit in the
flash memory control register 1 (FLMCR1) is set. The erasing-verifying time is not
included.)
4. Programming time maximum value (t
P
(max.)) = wait time after setting P bit (z) ×
maximum programming count (N)