Datasheet

Section 6 ROM
Rev. 6.00 Aug 04, 2006 page 160 of 680
REJ09B0145-0600
6.3 Programming (H8/3847R)
The write, verify, and other modes are selected as shown in table 6.3 in PROM mode.
(H8/3847R)
Table 6.3 Mode Selection in PROM Mode (H8/3847R)
Pins
Mode CE
CECE
CE OE
OEOE
OE PGM
PGMPGM
PGM V
PP
V
CC
EO
7
to EO
0
EA
16
to EA
0
Write L H L V
PP
V
CC
Data input Address input
Verify L L H V
PP
V
CC
Data output Address input
Programming L L L V
PP
V
CC
High impedance Address input
disabled L H H
HL L
HHH
Legend:
L: Low level
H: High level
V
PP
:V
PP
level
V
CC
:V
CC
level
The specifications for writing and reading are identical to those for the standard HN27C101
EPROM. However, page programming is not supported, and so page programming mode must not
be set. A PROM programmer that only supports page programming mode cannot be used. When
selecting a PROM programmer, ensure that it supports high-speed, high-reliability byte-by-byte
programming. Also, be sure to specify addresses from H'0000 to H'EDFF.
6.3.1 Writing and Verifying
An efficient, high-speed, high-reliability method is available for writing and verifying the PROM
data. This method achieves high speed without voltage stress on the device and without lowering
the reliability of written data. The basic flow of this high-speed, high-reliability programming
method is shown in figure 6.4.