Datasheet

Section 6 ROM
Rev. 6.00 Aug 04, 2006 page 191 of 680
REJ09B0145-0600
CE
OE
CE
A15−A0
OE
WE
I/O7−I/O0
Note: Data is latched on the rising edge of WE.
t
ceh
t
wep
t
f
t
r
t
ces
t
nxtc
Address stable
t
ds
t
dh
Command write Memory read mode
Figure 6.13 Timing Waveforms for Memory Read after Memory Write
Table 6.16 AC Characteristics in Transition from Memory Read Mode to Another Mode
Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C
Item Symbol Min Max Unit Notes
Command write cycle t
nxtc
20 — µs Figure 6.14
CE hold time t
ceh
0—ns
CE setup time t
ces
0—ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
WE rise time t
r
—30ns
WE fall time t
f
—30ns