Datasheet

Section 15 Electrical Characteristics
Rev. 6.00 Aug 04, 2006 page 533 of 680
REJ09B0145-0600
Values
Item Symbol Min Typ Max Unit
Test
Conditions
Wait time after
SWE-bit setting
*
1
x 1 ——µs
Wait time after
ESU-bit setting
*
1
y 100 — — µs
Wait time after
E-bit setting
*
1
*
6
z 10 — 100 ms
Wait time after
E-bit clear
*
1
α 10——µs
Wait time after
ESU-bit clear
*
1
β 10——µs
Wait time after
EV-bit setting
*
1
γ 20——µs
Wait time after
dummy write
*
1
ε 2 ——µs
Wait time after
EV-bit clear
*
1
η 4 ——µs
Wait time after
SWE-bit clear
*
1
θ 100 — — µs
Erase
Maximum erase
count
*
1
*
6
*
7
N — — 120 times
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 128 bytes (Shows the total period for which the P bit in FLMCR1
is set. It does not include the programming verification time.)
3. Block erase time (Shows the total period for which the E bit in FLMCR1 is set. It does
not include the erase verification time.)
4. Maximum programming time (t
P
(max))
t
P
(max) = Wait time after P-bit setting (z) × maximum number of writes (N)
5. The maximum number of writes (N) should be set according to the actual set value of
z1, z2, and z3 to allow programming within the maximum programming time (t
P
(max)).
The wait time after P-bit setting (z1 and z2) should be alternated according to the
number of writes (n) as follows:
1 ≤ n ≤ 6 z1 = 30 µs
7 ≤ n ≤ 1000 z2 = 200 µs
6. Maximum erase time (t
E
(max))
t
E
(max) = Wait time after E-bit setting (z) × maximum erase count (N)
7. The maximum number of erases (N) should be set according to the actual set value of z
to allow erasing within the maximum erase time (t
E
(max)).
8. This minimum value guarantees all characteristics after reprogramming (the guaranteed
range is from 1 to the minimum value).
9. Reference value when the temperature is 25°C (normally reprogramming will be
performed by this count).