Datasheet

Section 23 Electrical Characteristics
Rev.5.00 Nov. 02, 2005 Page 407 of 500
REJ09B0027-0500
Values
Item Symbol Test Condition Min Typ Max Unit
Erasing Wait time after SWE
bit setting*
1
x 1 — — µs
Wait time after ESU
bit setting*
1
y 100 — — µs
Wait time after E bit
setting*
1
*
6
z 10 — 100 ms
Wait time after E bit clear*
1
α 10 — — µs
Wait time after ESU
bit clear*
1
β 10 — — µs
Wait time after EV
bit setting*
1
γ 20 — — µs
Wait time after
dummy write*
1
ε 2 — — µs
Wait time after EV bit clear*
1
η 4 — — µs
Wait time after SWE
bit clear*
1
θ 100 — — µs
Maximum erase count *
1
*
6
*
7
N — — 120 Times
Notes: 1. Make the time settings in accordance with the program/erase algorithms.
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in flash
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
3. The time required to erase one block. (Indicates the time for which the E bit in flash
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
4. Programming time maximum value (t
P
(max.)) = wait time after P bit setting (z) ×
maximum programming count (N)
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
and z3, so that it does not exceed the programming time maximum value (t
P
(max.)).
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the programming count (n).
Programming count (n)
1 ≤ n ≤ 6 z1 = 30 µs
7 ≤ n ≤ 1000 z2 = 200 µs
6. Erase time maximum value (t
E
(max.)) = wait time after E bit setting (z) × maximum
erase count (N)
7. Set the maximum erase count (N) according to the actual set value of (z), so that it
does not exceed the erase time maximum value (t
E
(max.)).